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STH12N120K5-2, STP12N120K5,
STW12N120K5, STWA12N120K5
Electrical ratings
DocID022133 Rev 4
3/21
1
Electrical ratings
Table 2: Absolute maximum ratings
Symbol
Parameter
Value
Unit
VGS
Gate-source voltage
± 30
V
ID
Drain current at TC = 25 °C
12
A
ID
Drain current at TC = 100 °C
7.6
A
IDM
(1)
Drain current (pulsed)
48
A
PTOT
Total dissipation at TC = 25 °C
250
W
IAR
(2)
Max current during repetitive or single
pulse avalanche
4
A
EAS
(3)
Single pulse avalanche energy
215
mJ
dv/dt
(4)
Peak diode recovery voltage slope
4.5
V/ns
dv/dt
(5)
MOSFET dv/dt ruggedness
50
V/ns
Tj
Tstg
Operating junction temperature
Storage temperature
- 55 to 150
°C
Notes:
(1)
Pulse width limited by safe operating area.
(2)
Pulse width limited by TJmax.
(3)
Starting TJ = 25 °C, ID=IAS, VDD= 50 V
(4)
ISD ≤ 12 A, di/dt ≤ 100 A/µs, VPeak ≤ V(BR)DSS
(5)
VDS ≤ 960 V
Table 3: Thermal data
Symbol
Parameter
Value
Unit
H
2PAK-2 TO-220
TO-247
TO-247 long leads
Rthj-case Thermal resistance junction-case max
0.5
°C/W
Rthj-amb
Thermal resistance junction-amb max
62.5
50
°C/W
Rthj-pcb
Thermal resistance junction-pcb max
30
°C/W


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