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STGIB15CH60TS-L bảng dữ liệu(PDF) 6 Page - STMicroelectronics

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Electrical characteristics
STGIB15CH60TS-L
6/24
DocID026591 Rev 6
3
Electrical characteristics
TJ = 25 °C unless otherwise specified
3.1
Inverter part
Table 7: Static
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
ICES
Collector-cut off current
VCE = 600 V, VCC = Vboot = 15 V
-
100
µA
VCE(sat)
Collector-emitter
saturation voltage
VCC = Vboot = 15 V,
VIN(1) = 0 to 5 V, IC = 15 A
-
1.55
2.1
V
VCC = Vboot = 15 V, VIN = 0 to 5
V, IC = 20 A
-
1.65
VF
Diode forward voltage
VIN = 0, IC = 15 A
-
1.54
2.15
V
VIN = 0, IC = 20 A
-
1.65
V
Notes:
(1)Applied among HINx, LINx and GND for x = U, V, W.
Table 8: Inductive load switching time and energy
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
ton(1)
Turn-on time
VDD = 300 V,
VCC = Vboot = 15 V,
VIN(2) = 0 to 5 V, IC = 15 A
-
320
-
ns
tc(on)(1)
Crossover time on
-
160
-
toff(1)
Turn-off time
-
510
-
tc(off)(1)
Crossover time off
-
102
-
trr
Reverse recovery time
-
290
-
Eon
Turn-on switching energy
-
440
-
µJ
Eoff
Turn-off switching energy
-
213
-
Err
Reverse recovery energy
-
59
-
ton(1)
Turn-on time
VDD = 300 V,
VCC = Vboot = 15 V,
VIN(2) = 0 to 5 V, IC = 20 A
-
338
-
ns
tc(on)(1)
Crossover time on
-
178
-
toff(1)
Turn-off time
-
500
-
tc(off)(1)
Crossover time off
-
92
-
trr
Reverse recovery time
-
300
-
Eon
Turn-on switching energy
-
624
-
µJ
Eoff
Turn-off switching energy
-
296
-
Err
Reverse recovery energy
-
80
-
Notes:
(1)ton and toff include the propagation delay time of the internal drive. tC(on) and tC(off) are the switching time of the
IGBT itself under the internally given gate driving conditions.
(2)Applied among HINx, LINx and GND for x = U, V, W.


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