STFH24N60M2 datasheet(4/12 Pages) STMICROELECTRONICS

tên linh kiện	STFH24N60M2

Giải thích chi tiết về linh kiện	N-channel 600 V, 0.168 ??typ., 18 A MDmesh??M2 Power MOSFET in a TO-220FP wide creepage package

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Electrical characteristics

STFH24N60M2

4/12

DocID029415 Rev 2

2

Electrical characteristics

(TC = 25 °C unless otherwise specified)

Table 5: On /off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown voltage

VGS = 0, ID = 1 mA

600

V

IDSS

Zero gate voltage

drain current

VGS = 0, VDS = 600 V

1

µA

VGS = 0,

VDS = 600 V,

TC=125 °C(1)

100

µA

IGSS

Gate-body leakage

current

VDS = 0, VGS = ± 25 V

±10

µA

VGS(th)

Gate threshold voltage

VDS = VGS, ID = 250 µA

2

3

4

V

RDS(on)

Static drain-source on- resistance

VGS = 10 V, ID = 9 A

0.168

0.190

Ω

Notes:

(1)Defined by design, not subject to production test.

Table 6: Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Input capacitance

VDS = 100 V, f = 1 MHz,

VGS = 0 V

-

1060

-

pF

Coss

Output capacitance

-

55

-

pF

Crss

Reverse transfer

capacitance

-

2.2

-

pF

Coss eq.(1)

Equivalent output

capacitance

VDS= 0 to 480 V, VGS= 0 V

-

258

-

pF

RG

Intrinsic gate

resistance

f = 1 MHz, ID=0 A

-

7

-

Ω

Qg

Total gate charge

VDD = 480 V, ID = 18 A,

VGS = 10 V

(see Figure 15: "Test circuit for

gate charge behavior")

-

29

-

nC

Qgs

Gate-source charge

-

6

-

nC

Qgd

Gate-drain charge

-

12

-

nC

Notes:

(1)

Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDSincreases from 0 to 80% VDSS.

Số phần tương tự - STFH24N60M2

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
STMicroelectronics	STFH10N60M2	1Mb / 12P	Extremely low gate charge August 2016 Rev 3
	STFH10N60M6	552Kb / 12P	N-channel 600 V, 520 m typ., 6.4 A MDmesh M6 Power MOSFET in a TO-220FP wide creepage package May 2019 Rev 2
	STFH13N60M2	674Kb / 12P	Extremely low gate charge June 2016 Rev 2
	STFH18N60M2	692Kb / 12P	Extremely low gate charge June 2016 Rev 2
	STFH40N60M2	726Kb / 12P	N-channel 600 V, 0.078 typ., 34 A MDmeshTM M2 Power MOSFET in a TO-220FP wide creepage package June 2016 Rev 1

More results

Mô tả tương tự - STFH24N60M2

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
STMicroelectronics	STFU24N60M2	692Kb / 12P	N-channel 600 V, 0.168 廓 typ., 18 A MDmesh??M2 Power MOSFET in a TO-220FP ultra narrow leads package September 2015 Rev 2
	STFH40N60M2	726Kb / 12P	N-channel 600 V, 0.078 typ., 34 A MDmeshTM M2 Power MOSFET in a TO-220FP wide creepage package June 2016 Rev 1
	STF25N60M2-EP	335Kb / 14P	N-channel 600 V, 0.175 廓 typ., 18 A MDmesh??M2 EP Power MOSFET in a TO-220FP package January 2015 Rev 2
	STFH10N60M6	552Kb / 12P	N-channel 600 V, 520 m typ., 6.4 A MDmesh M6 Power MOSFET in a TO-220FP wide creepage package May 2019 Rev 2
	STF9HN65M2	444Kb / 13P	N-channel 600 V, 0.71 廓 typ., 5.5 A MDmesh??M2 Power MOSFET in a TO-220FP package April 2015 Rev 2
	STF11N60M2-EP	305Kb / 14P	N-channel 600 V, 0.550 typ., 7.5 A MDmesh™ M2 EP Power MOSFET in a TO-220FP package April 2018 Rev 4
	STF20N60M2-EP	288Kb / 14P	N-channel 600 V, 0.230 typ., 13 A, MDmesh™ M2 EP Power MOSFET in a TO-220FP package June 2018 Rev 4
	STF27N60M2-EP	665Kb / 13P	N-channel 600 V, 0.150 廓 typ., 20 A MDmesh??M2 EP Power MOSFET in TO-220FP package January 2016 Rev 1
	STFU18N60M2	513Kb / 12P	N-channel 600 V, 0.255 typ., 13 A MDmesh M2 Power MOSFET in a TO-220FP ultra narrow leads package June 2019 Rev 3
	STP25N60M2-EP	253Kb / 14P	N-channel 600 V, 0.175 廓 typ., 18 A MDmesh??M2 EP Power MOSFET in a TO-220 package January 2015 Rev 2

More results

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