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STP6N52K3 bảng dữ liệu(PDF) 4 Page - STMicroelectronics |
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STP6N52K3 bảng dữ liệu(HTML) 4 Page - STMicroelectronics |
4 / 22 page Electrical characteristics STB6N52K3, STD6N52K3, STF6N52K3, STP6N52K3 4/22 Doc ID 14994 Rev 2 2 Electrical characteristics (TC = 25 °C unless otherwise specified) Table 4. On /off states Symbol Parameter Test conditions Min. Typ. Max. Unit V(BR)DSS Drain-source breakdown voltage ID = 1 mA, VGS = 0 525 V IDSS Zero gate voltage drain current (VGS = 0) VDS = Max rating VDS = Max rating, TC=125 °C 1 50 µA µA IGSS Gate-body leakage current (VDS = 0) VGS = ± 20 V ± 10 µA VGS(th) Gate threshold voltage VDS = VGS, ID = 50 µA 3 3.75 4.5 V RDS(on Static drain-source on resistance VGS = 10 V, ID = 2.5 A 1 1.2 Ω Table 5. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit Ciss Coss Crss Input capacitance Output capacitance Reverse transfer capacitance VDS = 50 V, f = 1 MHz, VGS = 0 - 670 54 10 - pF pF pF Coss eq (1) 1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS Equivalent output capacitance VGS = 0, VDS = 0 to 240 V - TBD - pF RG Intrinsic gate resistance f = 1 MHz open drain - 4 - Ω Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD = 420 V, ID = 5 A, VGS = 10 V (see Figure 20) - 26 4 15 - nC nC nC Table 6. Switching times Symbol Parameter Test conditions Min. Typ. Max Unit td(on) tr td(off) tf Turn-on delay time Rise time Turn-off-delay time Fall time VDD = 260 V, ID = 2.5 A, RG = 4.7 Ω, VGS = 10 V (see Figure 19) - 10 11 31 18 - ns ns ns ns |
Số phần tương tự - STP6N52K3 |
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Mô tả tương tự - STP6N52K3 |
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