STAC2932B datasheet(1/14 Pages) STMICROELECTRONICS

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This is information on a product in full production.

January 2014

DocID15497 Rev 6

1/14

STAC2932B

HF/VHF/UHF RF power N-channel MOSFETs

Datasheet - production data

Figure 1. Pin connection

Features

• Gold metallization

• Excellent thermal stability

• Common source push-pull configuration

• P

OUT

= 300 W min. with 20 dB gain @ 175 MHz

• In compliance with the 2002/95/EC European

directive

• ST air cavity packaging technology - STAC™

package

Description

The STAC2932B is a gold metallized N-channel

MOS field-effect RF power transistor, intended for

use in 50 V DC large signal applications up to 250

MHz.

The STAC2932B benefits from the latest

generation of efficient, patent-pending package

technology, otherwise known as STAC

™

.

STAC244B

Air cavity

1

3

2

1. Drain

3. Gate

2. Source (bottom side)

Table 1. Device summary

Order code

Marking

Base qty.

Package

Packaging

STAC2932BW

STAC2932

(1)

20

STAC244B

Tray

1.

For more details please refer to

Chapter 7: Marking, packing and shipping specifications.

www.st.com

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