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LM5576Q0MH/NOPB bảng dữ liệu(PDF) 4 Page - Texas Instruments |
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LM5576Q0MH/NOPB bảng dữ liệu(HTML) 4 Page - Texas Instruments |
4 / 34 page 4 LM5576, LM5576-Q1 SNVS447J – JANUARY 2007 – REVISED NOVEMBER 2014 www.ti.com Product Folder Links: LM5576 LM5576-Q1 Submit Documentation Feedback Copyright © 2007–2014, Texas Instruments Incorporated Pin Functions (continued) PIN I/O DESCRIPTION APPLICATION INFORMATION NO. NAME 13, 14 PGND GROUND Power ground Low side reference for the PRE switch and the IS sense resistor. 15, 16 IS I Current sense Current measurement connection for the re- circulating diode. An internal sense resistor and a sample/hold circuit sense the diode current near the conclusion of the off-time. This current measurement provides the DC level of the emulated current ramp. 17, 18 SW O Switching node The source terminal of the internal buck switch. The SW pin should be connected to the external Schottky diode and to the buck inductor. 19 PRE I Pre-charge assist for the bootstrap capacitor This open drain output can be connected to SW pin to aid charging the bootstrap capacitor during very light load conditions or in applications where the output may be pre-charged before the LM5576 is enabled. An internal pre-charge MOSFET is turned on for 265 ns each cycle just prior to the on-time interval of the buck switch. 20 BST I Boost input for bootstrap capacitor An external capacitor is required between the BST and the SW pins. A 0.022-µF ceramic capacitor is recommended. The capacitor is charged from VCCvia an internal diode during the off-time of the buck switch. NA EP GROUND Exposed Pad Exposed metal pad on the underside of the device. It is recommended to connect this pad to the PWB ground plane, in order to aid in heat dissipation. (1) Absolute Maximum Ratings are limits beyond which damage to the device may occur. Recommended Operating Conditions are conditions under which operation of the device is intended to be functional. For ensured specifications and test conditions, see the Electrical Characteristics. (2) If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office/Distributors for availability and specifications. 6 Specifications 6.1 Absolute Maximum Ratings over operating free-air temperature range (unless otherwise noted) (1) (2) MIN MAX UNIT VIN to GND 76 V BST to GND 90 V PRE to GND 76 V SW to GND (Steady State) –1.5 V BST to VCC 76 V SD, VCC to GND 14 V BST to SW 14 V OUT to GND Limited to VIN SYNC, SS, FB, RAMP to GND 7 V (1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. 6.2 Handling Ratings: LM5576 MIN MAX UNIT Tstg Storage temperature range –65 150 °C V(ESD) Electrostatic discharge Human body model (HBM), per ANSI/ESDA/JEDEC JS-001, all pins(1) 2 kV |
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