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LM5576Q0MH/NOPB bảng dữ liệu(PDF) 4 Page - Texas Instruments

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LM5576, LM5576-Q1
SNVS447J – JANUARY 2007 – REVISED NOVEMBER 2014
www.ti.com
Product Folder Links: LM5576 LM5576-Q1
Submit Documentation Feedback
Copyright © 2007–2014, Texas Instruments Incorporated
Pin Functions (continued)
PIN
I/O
DESCRIPTION
APPLICATION INFORMATION
NO.
NAME
13, 14
PGND
GROUND
Power ground
Low side reference for the PRE switch and the IS
sense resistor.
15, 16
IS
I
Current sense
Current measurement connection for the re-
circulating diode. An internal sense resistor and a
sample/hold circuit sense the diode current near the
conclusion of the off-time. This current measurement
provides the DC level of the emulated current ramp.
17, 18
SW
O
Switching node
The source terminal of the internal buck switch. The
SW pin should be connected to the external Schottky
diode and to the buck inductor.
19
PRE
I
Pre-charge assist for the bootstrap capacitor
This open drain output can be connected to SW pin
to aid charging the bootstrap capacitor during very
light load conditions or in applications where the
output may be pre-charged before the LM5576 is
enabled. An internal pre-charge MOSFET is turned
on for 265 ns each cycle just prior to the on-time
interval of the buck switch.
20
BST
I
Boost input for bootstrap capacitor
An external capacitor is required between the BST
and the SW pins. A 0.022-µF ceramic capacitor is
recommended. The capacitor is charged from VCCvia
an internal diode during the off-time of the buck
switch.
NA
EP
GROUND
Exposed Pad
Exposed metal pad on the underside of the device. It
is recommended to connect this pad to the PWB
ground plane, in order to aid in heat dissipation.
(1)
Absolute Maximum Ratings are limits beyond which damage to the device may occur. Recommended Operating Conditions are
conditions under which operation of the device is intended to be functional. For ensured specifications and test conditions, see the
Electrical Characteristics.
(2)
If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office/Distributors for availability and
specifications.
6 Specifications
6.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted)
(1) (2)
MIN
MAX
UNIT
VIN to GND
76
V
BST to GND
90
V
PRE to GND
76
V
SW to GND (Steady State)
–1.5
V
BST to VCC
76
V
SD, VCC to GND
14
V
BST to SW
14
V
OUT to GND
Limited to VIN
SYNC, SS, FB, RAMP to GND
7
V
(1)
JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
6.2 Handling Ratings: LM5576
MIN
MAX
UNIT
Tstg
Storage temperature range
–65
150
°C
V(ESD)
Electrostatic discharge
Human body model (HBM), per ANSI/ESDA/JEDEC JS-001, all
pins(1)
2
kV


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