STW10N105K5 datasheet(4/18 Pages) STMICROELECTRONICS

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Electrical characteristics

STF10N105K5, STP10N105K5, STW10N105K5

4/18

DocID026932 Rev 2

2

Electrical characteristics

(Tcase = 25 °C unless otherwise specified)

Table 4: On /off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown voltage

ID = 1 mA, VGS = 0

1050

V

IDSS

Zero gate voltage,

drain current (VGS = 0)

VDS = 1050 V

1

µA

VDS = 1050 V,

TC = 125 °C

50

µA

IGSS

Gate-body leakage

current

VGS = ± 20 V; VDS = 0

10

µA

VGS(th)

Gate threshold voltage

VDS = VGS, ID = 100 µA

3

4

5

V

RDS(on)

Static drain-source on- resistance

VGS = 10 V, ID = 3 A

1

1.3

Ω

Table 5: Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Input capacitance

VDS =100 V,

f = 1 MHz,

VGS = 0

-

545

-

pF

Coss

Output capacitance

30

pF

Crss

Reverse transfer capacitance

1.3

pF

Co(tr)

(1)

Equivalent capacitance time related

VGS = 0, VDS = 0

to 840 V

65

pF

Co(er)

(2)

Equivalent capacitance energy

pF

RG

Intrinsic gate resistance

f = 1 MHz open

drain

7

Ω

Qg

Total gate charge

VDD = 840 V, ID = 6 A

VGS =10 V

21.5

nC

Qgs

Gate-source charge

3.3

nC

Qgd

Gate-drain charge

15.5

nC

Notes:

(1)

Time related is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS

increases from 0 to 80% VDSS.

(2)

Energy related is defined as a constant equivalent capacitance giving the same stored energy as Coss when VDS

increases from 0 to 80% VDSS.

Table 6: Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(on)

Turn-on delay time

VDD = 525 V, ID = 3 A,

RG = 4.7 Ω, VGS = 10 V

-

19

-

ns

tr

Rise time

8

ns

td(off)

Turn-off-delay time

50

ns

tf

Fall time

21.5

ns

Số phần tương tự - STW10N105K5

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