STW10N105K5 datasheet(3/18 Pages) STMICROELECTRONICS

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STF10N105K5, STP10N105K5, STW10N105K5

Electrical ratings

DocID026932 Rev 2

3/18

1

Electrical ratings

Table 2: Absolute maximum ratings

Symbol

Parameter

Value

Unit

TO-220

TO-247

TO-220FP

VGS

Gate- source voltage

30

V

ID

Drain current (continuous) at TC = 25 °C

6

A

ID

Drain current (continuous) at TC = 100 °C

3.78

A

IDM

(1)

Drain current (pulsed)

24

A

PTOT

Total dissipation at TC = 25 °C

130

30

W

IAR

Max. current during repetitive or single pulse

avalanche

2

A

EAS

Single pulse avalanche energy

(starting TJ = 25 °C, ID = IAS, VDD = 50 V)

140

mJ

dv/dt

(2)

Peak diode recovery voltage slope

4.5

V/ns

dv/dt

(3)

MOSFET dv/dt ruggedness

50

V/ns

VISO

Insulation withstand voltage (RMS) from all

three leads to external heatsink (t = 1 s;

TC = 25 ° C)

2500

V

Tj

Tstg

Operating junction temperature

Storage temperature

-55 to 150

°C

Notes:

(1)

Pulse width limited by safe operating area.

(2)

ISD ≤ 6 A, di/dt ≤ 100 A/µs, Vpeak ≤ V(BR)DSS.

(3)

VSD ≤ 840.

Table 3: Thermal data

Symbol

Parameter

Value

Unit

TO-220

TO-247

TO-220FP

Rthj-case

Thermal resistance junction-case max.

0.96

°C/W

Thermal resistance junction-case max.

4.2

Rthj-amb

Thermal resistance junction-ambient max.

62.50

°C/W

Số phần tương tự - STW10N105K5

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