STFI6N80K5 datasheet(4/15 Pages) STMICROELECTRONICS

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Electrical characteristics

STF6N80K5, STFI6N80K5

4/15

DocID024664 Rev 4

2

Electrical characteristics

(TCASE = 25 °C unless otherwise specified).

Table 4. On/off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown

voltage (VGS = 0)

ID = 1 mA

800

V

IDSS

Zero gate voltage drain

current (VGS = 0)

VDS = 800 V

1

µA

VDS = 800 V, Tj = 125 °C

(1)

1. Defined by design, not subject to production test.

50

µA

IGSS

Gate body leakage current

(VDS = 0)

VGS = ± 20 V

±10

µA

VGS(th)

Gate threshold voltage

VDS = VGS, ID = 100 µA

3

4

5

V

RDS(on)

Static drain-source

on-resistance

VGS = 10 V, ID = 2 A

1.3

1.6

Ω

Table 5. Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Input capacitance

VDS = 100 V,

f = 1 MHz,

VGS = 0

-

270

-

pF

Coss

Output capacitance

-

25

-

pF

Crss

Reverse transfer

capacitance

-0.7

-

pF

Co(tr)

(1)

1.

Time related is defined as a constant equivalent capacitance giving the same charging time as Coss when

VDS increases from 0 to 80% VDSS

Equivalent capacitance time

-38

-

pF

Co(er)

(2)

2.

Energy related is defined as a constant equivalent capacitance giving the same stored energy as Coss

when VDS increases from 0 to 80% VDSS

Equivalent capacitance

energy related

-16

-

pF

RG

Intrinsic gate resistance

f = 1 MHz, ID = 0

-

7.5

-

Ω

Qg

Total gate charge

VDD = 640 V, ID = 4.5 A

VGS = 10 V

(see Figure 15: Gate charge

test circuit)

-13

-

nC

Qgs

Gate-source charge

-

2.1

-

nC

Qgd

Gate-drain charge

-

9.6

-

nC

Số phần tương tự - STFI6N80K5

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