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4 / 14 page Electrical characteristics STF5N105K5 4/14 DocID026702 Rev 5 2 Electrical characteristics (TCASE = 25 °C unless otherwise specified). Table 4: On/off states Symbol Parameter Test conditions Min. Typ. Max. Unit V(BR)DSS Drain-source breakdown voltage VGS= 0, ID = 1 mA 1050 V IDSS Zero gate voltage drain current VGS = 0, VDS = 1050 V 1 µA VGS = 0, VDS = 1050 V, Tc=125 °C 50 µA IGSS Gate body leakage current VDS = 0, VGS = ± 20 V ±10 µA VGS(th) Gate threshold voltage VDS = VGS, ID = 100 µA 3 4 5 V RDS(on) Static drain-source on- resistance VGS = 10 V, ID= 1.5 A 2.9 3.5 Ω Table 5: Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit Ciss Input capacitance VGS=0, VDS =100 V, f=1 MHz - 210 - pF Coss Output capacitance - 16 - pF Crss Reverse transfer capacitance - 0.5 - pF Co(tr)(1) Equivalent capacitance time related VGS = 0, VDS = 0 to 840 V - 26 - pF Co(er)(2) Equivalent capacitance energy related - 10 - pF RG Intrinsic gate resistance f = 1MHz open drain - 9 - Ω Qg Total gate charge VDD = 840 V, ID = 3 A VGS =10 V Figure 16: "Gate charge test circuit" - 12.5 - nC Qgs Gate-source charge - 2 - nC Qgd Gate-drain charge - 9.5 - nC Notes: (1)Time related is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS (2)energy related is defined as a constant equivalent capacitance giving the same stored energy as Coss when VDS increases from 0 to 80% VDSS Table 6: Switching times Symbol Parameter Test conditions Min. Typ. Max. Unit td(on) Turn-on delay time VDD = 525V, ID = 1.5 A, RG =4.7 Ω, VGS=10 V Figure 18: " Unclamped inductive load test circuit" - 15.5 - ns tr Rise time - 8.5 - ns td(off) Turn-off delay time - 31 - ns tf Fall time - 24 - ns |
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