STF5N60M2 datasheet(1/13 Pages) STMICROELECTRONICS

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June 2016

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This is information on a product in full production.

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STF5N60M2

N-

channel 600 V, 1.3 Ω typ., 3.5 A MDmesh™ M2

Power MOSFET in a TO-220FP package

Datasheet - production data

Figure 1: Internal schematic diagram

Features

Order code

VDS@ TJmax

RDS(on) max.

ID

STF5N60M2

650 V

1.4 Ω

3.5 A



Extremely low gate charge



Excellent output capacitance (COSS) profile



100% avalanche tested



Zener-protected

Applications



Switching applications

Description

This device is an N-channel Power MOSFET

developed using MDmesh™ M2 technology.

Thanks to its strip layout and an improved vertical

structure, the device exhibits low on-resistance

and optimized switching characteristics,

rendering it suitable for the most demanding high

efficiency converters.

Table 1: Device summary

Order code

Marking

Package

Packing

STF5N60M2

5N60M2

TO-220FP

Tube

TO-220FP

Số phần tương tự - STF5N60M2

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
STMicroelectronics	STF5N62K3	1Mb / 19P	N-channel 620 V, 1.28 ohm, 4.2 A SuperMESH3 Power MOSFET
STMicroelectronics	STF5N65M6	700Kb / 13P	N-channel 650 V, 1.15 Ω typ., 4 A MDmesh™ M6 Power MOSFET in a TO-220FP package May 2016

More results

Mô tả tương tự - STF5N60M2

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
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	STB28N60M2	1Mb / 21P	Extremely low gate charge
	STD11N65M2	1Mb / 21P	Extremely low gate charge May 2014 Rev 1
	STF7N65M2	904Kb / 13P	Extremely low gate charge August 2014 Rev 2
	STL13N65M2	642Kb / 16P	Extremely low gate charge December 2014 Rev 1
	STL19N60M2	770Kb / 15P	Extremely low gate charge January 2016 Rev 1
	STW56N65M2	730Kb / 12P	Extremely low gate charge December 2014 Rev 1
	STB24N65M2	1Mb / 20P	Extremely low gate charge

More results

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Số phần tương tự - STF5N60M2

Mô tả tương tự - STF5N60M2

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