STF16N50M2 datasheet(3/21 Pages) STMICROELECTRONICS

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STD16N50M2, STF16N50M2, STP16N50M2

Electrical ratings

DocID026641 Rev 5

3/21

1

Electrical ratings

Table 2: Absolute maximum ratings

Symbol

Parameter

Value

Unit

DPAK

TO-220

TO-220FP

VGS

Gate-source voltage

±25

V

ID

Drain current (continuous) at TC = 25 °C

13

A

ID

Drain current (continuous) at TC = 100 °C

8

A

IDM(1)

Drain current (pulsed)

52

A

PTOT

Total dissipation at TC = 25 °C

110

25

W

dv/dt (2)

Peak diode recovery voltage slope

15

V/ns

dv/dt (3)

MOSFET dv/dt ruggedness

50

V/ns

VISO

Insulation withstand voltage (RMS) from

all three leads to external heat sink

(t = 1 s, TC = 25 °C)

2500

V

Tstg

Storage temperature range

-55 to 150

°C

Tj

Operating junction temperature range

Notes:

(1) Pulse width is limited by safe operating area.

(2) ISD ≤ 13 A, di/dt ≤ 400 A/µs, VDS peak < V(BR)DSS, VDD = 80% V(BR)DSS

(3) VDS ≤ 400 V

Table 3: Thermal data

Symbol

Parameter

Value

Unit

DPAK

TO-220

TO-220FP

Rthj-case

Thermal resistance junction-case

1.14

5

°C/W

Rthj-amb

Thermal resistance junction-ambient

62.5

Rthj-pcb(1)

Thermal resistance junction-pcb

50

Notes:

(1)When mounted on 1 inch² FR-4, 2 Oz copper board.

Table 4: Avalanche characteristics

Symbol

Parameter

Value

Unit

IAR

Avalanche current, repetitive or non-repetitive (pulse width limited by Tjmax)

4

A

EAS

Single pulse avalanche energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V)

215

mJ

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