Electrical characteristics

STD11N65M2, STP11N65M2, STU11N65M2

4/21

DocID026376 Rev 1

2

Electrical characteristics

(T

C

= 25 °C unless otherwise specified)

Table 5. On /off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V

(BR)DSS

Drain-source

breakdown voltage

V

GS

= 0, I

D

= 1 mA

650

V

I

DSS

Zero gate voltage

drain current

V

GS

= 0, V

DS

= 650 V

1

μA

V

GS

= 0, V

DS

= 650 V,

T

C

=125 °C

100

μA

I

GSS

Gate-body leakage

current

V

DS

= 0, V

GS

= ± 25 V

±10

μA

V

GS(th)

Gate threshold voltage

V

DS

= V

GS

, I

D

= 250 μA

234

V

R

DS(on)

Static drain-source

on-resistance

V

GS

= 10 V, I

D

= 3.5 A

0.6

0.67

Ω

Table 6. Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

C

iss

Input capacitance

V

GS

= 0, V

DS

= 100 V,

f = 1 MHz,

-

410

-

pF

C

oss

Output capacitance

-

20

-

pF

C

rss

Reverse transfer

capacitance

-0.95

-

pF

C

oss eq.

(1)

1.

C

oss eq.

is defined as a constant equivalent capacitance giving the same charging time as C

oss

when V

DS

increases from 0 to 80% V

DSS

Equivalent output

capacitance

V

GS

= 0, V

DS

= 0 to 520 V

-

83

-

pF

R

G

Intrinsic gate

resistance

f = 1 MHz, I

D

=0

-

6.4

-

Ω

Q

g

Total gate charge

V

DD

= 520 V, I

D

= 7 A,

V

GS

= 10 V (see

Figure 17)

-12.5

-

nC

Q

gs

Gate-source charge

-

3.2

-

nC

Q

gd

Gate-drain charge

-

5.8

-

nC