STP9N60M2 datasheet(1/21 Pages) STMICROELECTRONICS

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This is information on a product in full production.

May 2013

DocID024399 Rev 2

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STD9N60M2, STP9N60M2,

STU9N60M2

N-channel 600 V, 0.72

Ω typ., 5.5 A MDmesh II Plus™ low Q

g

Power MOSFET in DPAK, TO-220 and IPAK packages

Datasheet - production data

Figure 1. Internal schematic diagram

Features

• Extremely low gate charge

• Lower R

DS(on)

x area vs previous generation

• Low gate input resistance

• 100% avalanche tested

• Zener-protected

Applications

• Switching applications

Description

These devices are N-channel Power MOSFETs

developed using a new generation of MDmesh™

technology: MDmesh II Plus™ low Qg. These

revolutionary Power MOSFETs associate a

vertical structure to the company's strip layout to

yield one of the world's lowest on-resistance and

gate charge. They are therefore suitable for the

most demanding high efficiency converters.

TO-220

1

2

3

TAB

1

3

TAB

DPAK

3

2

1

TAB

IPAK

AM15572v1

, TAB

Order codes

VDS @

TJmax

RDS(on)

max

ID

STD9N60M2

650 V

0.78

Ω

5.5 A

STP9N60M2

STU9N60M2

Table 1. Device summary

Order codes

Marking

Package

Packaging

STD9N60M2

9N60M2

DPAK

Tape and reel

STP9N60M2

TO-220

Tube

STU9N60M2

IPAK

Tube

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Số phần tương tự - STP9N60M2

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
VBsemi Electronics Co.,...	STP9N60M2	1Mb / 10P	N-Channel 650V (D-S) Power MOSFET

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Mô tả tương tự - STP9N60M2

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