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STD3LN80K5
Electrical characteristics
DocID027714 Rev 2
5/15
Table 7: Switching times
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
td(on)
Turn-on delay time
VDD = 400 V, ID = 1 A, RG = 4.7
Ω,
VGS = 10 V ( see Figure 14: "Test
circuit for resistive load switching
times" and Figure 19: "Switching
time waveform" )
-
6.2
-
ns
tr
Rise time
-
7
-
ns
td(off)
Turn-off delay time
-
30
-
ns
tf
Fall time
-
26
-
ns
Table 8: Source drain diode
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
ISD
Source-drain current
-
2
A
ISDM(1)
Source-drain current
(pulsed)
-
8
A
VSD(2)
Forward on voltage
ISD = 2 A, VGS = 0 V
-
1.5
V
trr
Reverse recovery time
ISD = 2 A, di/dt = 100 A/µs,
VDD = 60 V ( see Figure 16: "Test
circuit for inductive load
switching and diode recovery
times" )
-
210
ns
Qrr
Reverse recovery
charge
-
0.8
µC
IRRM
Reverse recovery
current
-
7.6
A
trr
Reverse recovery time
ISD = 2 A, di/dt = 100 A/µs,
VDD = 60 V, Tj = 150 °C, (see
Figure 16: "Test circuit for
inductive load switching and
diode recovery times" )
-
345
ns
Qrr
Reverse recovery
charge
-
1.2
µC
IRRM
Reverse recovery
current
-
7.2
A
Notes:
(1)Pulse width limited by safe operating area.
(2)Pulsed: pulse duration = 300 µs, duty cycle 1.5%.
Table 9: Gate-source Zener diode
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
V(BR)GSO
Gate-source breakdown voltage
IGS = ± 1 mA, ID = 0 A
30
-
-
V
The built-in back-to-back Zener diodes are specifically designed to enhance the ESD
performance of the device. The Zener voltage facilitates efficient and cost-effective device
integrity protection, thus eliminating the need for additional external componentry.


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