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STD3LN80K5 bảng dữ liệu(PDF) 5 Page - STMicroelectronics |
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5 / 15 page STD3LN80K5 Electrical characteristics DocID027714 Rev 2 5/15 Table 7: Switching times Symbol Parameter Test conditions Min. Typ. Max. Unit td(on) Turn-on delay time VDD = 400 V, ID = 1 A, RG = 4.7 Ω, VGS = 10 V ( see Figure 14: "Test circuit for resistive load switching times" and Figure 19: "Switching time waveform" ) - 6.2 - ns tr Rise time - 7 - ns td(off) Turn-off delay time - 30 - ns tf Fall time - 26 - ns Table 8: Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit ISD Source-drain current - 2 A ISDM(1) Source-drain current (pulsed) - 8 A VSD(2) Forward on voltage ISD = 2 A, VGS = 0 V - 1.5 V trr Reverse recovery time ISD = 2 A, di/dt = 100 A/µs, VDD = 60 V ( see Figure 16: "Test circuit for inductive load switching and diode recovery times" ) - 210 ns Qrr Reverse recovery charge - 0.8 µC IRRM Reverse recovery current - 7.6 A trr Reverse recovery time ISD = 2 A, di/dt = 100 A/µs, VDD = 60 V, Tj = 150 °C, (see Figure 16: "Test circuit for inductive load switching and diode recovery times" ) - 345 ns Qrr Reverse recovery charge - 1.2 µC IRRM Reverse recovery current - 7.2 A Notes: (1)Pulse width limited by safe operating area. (2)Pulsed: pulse duration = 300 µs, duty cycle 1.5%. Table 9: Gate-source Zener diode Symbol Parameter Test conditions Min. Typ. Max. Unit V(BR)GSO Gate-source breakdown voltage IGS = ± 1 mA, ID = 0 A 30 - - V The built-in back-to-back Zener diodes are specifically designed to enhance the ESD performance of the device. The Zener voltage facilitates efficient and cost-effective device integrity protection, thus eliminating the need for additional external componentry. |
Số phần tương tự - STD3LN80K5 |
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Mô tả tương tự - STD3LN80K5 |
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