STB150N3LH6 datasheet(3/15 Pages) STMICROELECTRONICS

tên linh kiện	STB150N3LH6

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STB150N3LH6

Electrical ratings

Doc ID 023351 Rev 1

3/15

1

Electrical ratings

Table 2.

Absolute maximum ratings

Symbol

Parameter

Value

Unit

VDS

Drain-source voltage (VGS = 0)

30

V

VGS

Gate-source voltage

± 20

V

ID

(1)

1.

Limited by wire bonding.

Drain current (continuous) at TC = 25 °C

80

A

ID

Drain current (continuous) at TC = 100 °C

80

A

IDM

(2)

2.

Pulse width limited by safe operating area.

Drain current (pulsed)

320

A

PTOT

Total dissipation at TC = 25 °C

110

W

Tstg

Storage temperature

-55 to 175

°C

Tj

Operating junction temperature

°C

Table 3.

Thermal resistance

Symbol

Parameter

Value

Unit

Rthj-case

Thermal resistance junction-case max

1.36

°C/W

Rthj-pcb

(1)

1.

When mounted on 1 inch2 oz Cu board.

Thermal resistance junction-pcb max

35

°C/W

Table 4.

Thermal resistance

Symbol

Parameter

Value

Unit

IAV

Not-repetitive avalanche current

40

A

EAS

(1)

1.

Starting Tj = 25°C, ID = 40 A, VDD = 25 V

Single pulse avalanche energy

525

mJ

Obsolete

Product(s)

- Obsolete

Product(s)

Số phần tương tự - STB150N3LH6

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
STMicroelectronics	STB150NF04	395Kb / 11P	N-channel 40 V - 0.005 廓 - 80 A - D2PAK STripFET?줚I Power MOSFET
VBsemi Electronics Co.,...	STB150NF04	1Mb / 9P	N-Channel 40 V (D-S) MOSFET
STMicroelectronics	STB150NF55	551Kb / 14P	N-CHANNEL 55V - 0.005 ohm -120A D짼PAK/TO-220/TO-247 STripFET??II POWER MOSFET October 2002
VBsemi Electronics Co.,...	STB150NF55	1Mb / 8P	N-Channel 60 V (D-S) MOSFET
STMicroelectronics	STB150NF55T4	561Kb / 19P	N-channel 55V - 0.005廓 - 120A - D2PAK/TO-220/TO-247 STripFET??II Power MOSFET

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nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
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