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STP28N60M2 bảng dữ liệu(PDF) 4 Page - STMicroelectronics

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Electrical characteristics
STB28N60M2, STI28N60M2, STP28N60M2,
STW28N60M2
4/21
DocID025254 Rev 4
2
Electrical characteristics
TC = 25 °C unless otherwise specified.
Table 5: On/off states
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
V(BR)DSS
Drain-source breakdown
voltage
VGS = 0 V, ID = 1 mA
600
V
IDSS
Zero gate voltage drain
current
VGS = 0 V, VDS = 600 V
1
µA
VGS = 0 V, VDS = 600 V,
TC = 125 °C(1)
100
µA
IGSS
Gate-body leakage
current
VDS = 0 V, VGS = ±25 V
±10
µA
VGS(th)
Gate threshold voltage
VDS = VGS, ID = 250 µA
2
3
4
V
RDS(on)
Static drain-source
on-resistance
VGS = 10 V, ID = 11 A
0.135
0.150
Notes:
(1) Defined by design, not subject to production test.
Table 6: Dynamic
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Ciss
Input capacitance
VDS= 100 V, f = 1 MHz,
VGS = 0 V
-
1440
-
pF
Coss
Output capacitance
-
70
-
pF
Crss
Reverse transfer
capacitance
-
2
-
pF
Coss eq.(1)
Equivalent output
capacitance
VDS = 0 to 480 V, VGS = 0 V
-
104
-
pF
RG
Intrinsic gate resistance
f = 1 MHz open drain
-
5.5
-
Qg
Total gate charge
VDD = 480 V, ID = 22 A,
VGS = 0 to 10 V (see Figure 17:
"Test circuit for gate charge
behavior")
-
36
-
nC
Qgs
Gate-source charge
-
7.2
-
nC
Qgd
Gate-drain charge
-
16
-
nC
Notes:
(1)Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80 % VDSS.
Table 7: Switching times
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
td(on)
Turn-on delay time
VDD = 300 V, ID = 11 A,
RG = 4.7
Ω, VGS = 10 V
(see Figure 16: "Test circuit for
resistive load switching times"
and Figure 21: "Switching time
waveform" )
-
14.5
-
ns
tr
Rise time
-
7.2
-
ns
td(off)
Turn-off-delay time
-
100
-
ns
tf
Fall time
-
8
-
ns


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