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STB24N65M2, STF24N65M2, STP24N65M2
Electrical ratings
DocID026475 Rev 2
3/20
1
Electrical ratings
Table 2: Absolute maximum ratings
Symbol
Parameter
Value
Unit
D2PAK
TO-220
TO-220FP
VGS
Gate-source voltage
± 25
V
ID
Drain current (continuous) at TC = 25 °C
16
16 (1)
A
ID
Drain current (continuous) at TC = 100 °C
10
10 (1)
A
IDM (2)
Drain current (pulsed)
64
64 (1)
A
PTOT
Total dissipation at TC = 25 °C
150
30
W
dv/dt (3)
Peak diode recovery voltage slope
15
V/ns
dv/dt (4)
MOSFET dv/dt ruggedness
50
V/ns
VISO
Insulation withstand voltage (RMS) from all three
leads to external heat sink (t = 1 s; TC = 25 °C)
2500
V
Tstg
Storage temperature
- 55 to 150
°C
Tj
Max. operating junction temperature
Notes:
(1)Limited by maximum junction temperature.
(2)Pulse width limited by safe operating area.
(3)ISD ≤ 16 A, di/dt ≤ 400 A/µs; VDS(peak) < V(BR)DSS, VDD = 80% V(BR)DSS.
(4)VDS ≤ 520 V
Table 3: Thermal data
Symbol
Parameter
Value
Unit
D2PAK
TO-220
TO-220FP
Rthj-case
Thermal resistance junction-case max
0.83
4.2
°C/W
Rthj-pcb
Thermal resistance junction-pcb max (1)
30
°C/W
Rthj-amb
Thermal resistance junction-ambient max
62.5
°C/W
Notes:
(1)When mounted on 1 inch² FR-4, 2 Oz copper board.
Table 4: Avalanche characteristics
Symbol
Parameter
Value
Unit
IAR
Avalanche current, repetitive or not repetitive (pulse width limited by Tjmax)
2.2
A
EAS
Single pulse avalanche energy (starting Tj=25°C, ID= IAR; VDD=50V)
650
mJ


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