STB10N95K5 datasheet(8/22 Pages) STMICROELECTRONICS

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Electrical characteristics

STB10N95K5, STF10N95K5, STP10N95K5, STW10N95K5

8/22

DocID024850 Rev 3

Figure 14. Normalized gate threshold voltage vs

temperature

Figure 15. Normalized on-resistance vs

temperature

Figure 16. Normalized VDS vs temperature

Figure 17. Source-drain diode forward

characteristics

VGS(th)

0.6

0.4

0.2

0

-100

0

TJ(°C)

(norm)

-50

0.8

50

150

ID=100µA

100

1

1.2

AM16142v1

RDS(on)

2

1

0

TJ(°C)

(norm)

0.5

1.5

2.5

ID=4A

VGS=10V

-100

0

-50

50

150

100

AM16143v1

VDS

TJ(°C)

(norm)

0.85

0.9

0.95

1

1.05

1.1

ID=1mA

-100

0

-50

50

150

100

AM16145v1

VSD

2

4

ISD(A)

(V)

3

5

6

0.5

0.6

0.7

0.8

TJ=-50°C

TJ=150°C

TJ=25°C

0.9

7

AM16144v1

Figure 18. Maximum avalanche energy vs

starting TJ

EAS

0

50

TJ(°C)

(mJ)

25

125

75

100

0

20

40

60

80

100

ID=2.5 A

VDD=50 V

120

AM16146v1

Số phần tương tự - STB10N95K5

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	STB10NB20	81Kb / 8P	N - CHANNEL 200V - 0.30ohm - 10A - D2PAK PowerMESH] MOSFET

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Mô tả tương tự - STB10N95K5

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Số phần tương tự - STB10N95K5

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