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4 / 14 page Electrical characteristics STW40N90K5, STWA40N90K5 4/14 DocID028929 Rev 2 2 Electrical characteristics (Tcase =25 °C unless otherwise specified) Table 5: On /off states Symbol Parameter Test conditions Min. Typ. Max. Unit V(BR)DSS Drain-source breakdown voltage VGS = 0 V, ID = 1 mA 900 V IDSS Zero gate voltage drain current VGS = 0 V, VDS = 900 V 1 µA VGS = 0 V, VDS = 900 V, TC=125 °C(1) 50 µA IGSS Gate-body leakage current VDS=0 V, VGS = ± 20 V ±10 µA VGS(th) Gate threshold voltage VDS = VGS, ID = 100 µA 3 4 5 V RDS(on) Static drain-source on- resistance VGS = 10 V, ID = 20 A 0.088 0.099 Ω Notes: (1)Defined by design, not subject to production test. Table 6: Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit Ciss Input capacitance VGS=0 V, VDS =100 V, f=1 MHz - 3263 - pF Coss Output capacitance - 212 - pF Crss Reverse transfer capacitance - 1.3 - pF Co(tr)(1) Equivalent capacitance time related VGS = 0 V, VDS = 0 V to 720 V - 429 - pF Co(er)(2) Equivalent capacitance energy related - 159 - pF RG Intrinsic gate resistance f = 1 MHz, ID=0 A - 1.9 - Ω Qg Total gate charge VDD = 720 V, ID = 40 A VGS =10 V (see Figure 15: "Test circuit for gate charge behavior") - 89 - nC Qgs Gate-source charge - 25 - nC Qgd Gate-drain charge - 37.5 - nC Notes: (1)Time related is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS (2)energy related is defined as a constant equivalent capacitance giving the same stored energy as Coss when VDS increases from 0 to 80% VDSS |
Số phần tương tự - STWA40N90K5 |
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Mô tả tương tự - STWA40N90K5 |
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