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Giải thích chi tiết về linh kiện  N-channel 900 V, 0.088 ??typ., 40 A MDmesh??K5 Power MOSFETs in TO-247 and TO-247 long leads packages
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Electrical characteristics
STW40N90K5, STWA40N90K5
4/14
DocID028929 Rev 2
2
Electrical characteristics
(Tcase =25 °C unless otherwise specified)
Table 5: On /off states
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
V(BR)DSS
Drain-source breakdown
voltage
VGS = 0 V, ID = 1 mA
900
V
IDSS
Zero gate voltage drain
current
VGS = 0 V, VDS = 900 V
1
µA
VGS = 0 V, VDS = 900 V,
TC=125 °C(1)
50
µA
IGSS
Gate-body leakage current
VDS=0 V, VGS = ± 20 V
±10
µA
VGS(th)
Gate threshold voltage
VDS = VGS, ID = 100 µA
3
4
5
V
RDS(on)
Static drain-source on-
resistance
VGS = 10 V, ID = 20 A
0.088
0.099
Ω
Notes:
(1)Defined by design, not subject to production test.
Table 6: Dynamic
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Ciss
Input capacitance
VGS=0 V, VDS =100 V, f=1 MHz
-
3263
-
pF
Coss
Output capacitance
-
212
-
pF
Crss
Reverse transfer
capacitance
-
1.3
-
pF
Co(tr)(1)
Equivalent capacitance
time related
VGS = 0 V, VDS = 0 V to 720 V
-
429
-
pF
Co(er)(2)
Equivalent capacitance
energy related
-
159
-
pF
RG
Intrinsic gate resistance
f = 1 MHz, ID=0 A
-
1.9
-
Ω
Qg
Total gate charge
VDD = 720 V, ID = 40 A
VGS =10 V
(see Figure 15: "Test circuit for
gate charge behavior")
-
89
-
nC
Qgs
Gate-source charge
-
25
-
nC
Qgd
Gate-drain charge
-
37.5
-
nC
Notes:
(1)Time related is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDSS
(2)energy related is defined as a constant equivalent capacitance giving the same stored energy as Coss when VDS
increases from 0 to 80% VDSS


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