STPSC40H12C datasheet(2/10 Pages) STMICROELECTRONICS

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Characteristics

STPSC40H12C

2/10

DocID030337 Rev 1

1

Characteristics

Table 2: Absolute ratings (limiting values per diode at 25 °C, unless otherwise specified)

Symbol

Parameter

Value

Unit

VRRM

Repetitive peak reverse voltage (Tj = -40 °C to +175 °C)

1200

V

IF(RMS)

Forward rms current

38

A

IF(AV)

Average forward

current

TC = 150 °C, DC current

Per diode/per

device

20/40

A

TC = 135 °C, DC current

27/54

TC = 25 °C, DC current

38/76

IFRM

Repetitive peak

forward current

TC = 150 °C, Tj

= 175 °C, δ = 0.1

79

A

IFSM

Surge non repetitive

forward current

tp = 10 ms sinusoidal

TC = 25 °C

140

A

TC = 150 °C

120

tp = 10 µs square

TC = 25 °C

700

Tstg

Storage temperature range

-65 to +175

°C

Tj

Operating junction temperature range

-40 to +175

°C

Table 3: Thermal resistance parameters

Symbol

Parameter

Typ. value

Max. value

Unit

Rth(j-c)

Junction to case

Per diode

0.40

0.55

°C/W

Per device

0.20

0.28

Table 4: Static electrical characteristics (per diode)

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

IR(1)

Reverse leakage current

Tj = 25 °C

VR = VRRM

-

10

120

µA

Tj = 150 °C

-

60

800

VF(2)

Forward voltage drop

Tj = 25 °C

IF = 20 A

-

1.35

1.50

V

Tj = 150 °C

-

1.75

2.25

Notes:

(1)Pulse test: tp = 10 ms, δ < 2%

(2)Pulse test: tp = 500 µs, δ < 2%

To evaluate the conduction losses, use the following equation:

P = 1.07 x IF(AV) + 0.059 x IF2(RMS)

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