STPSC6H12 datasheet(1/8 Pages) STMICROELECTRONICS

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This is information on a product in full production.

September 2016

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STPSC6H12

1200 V power Schottky silicon carbide diode

Datasheet

- production data

Features

 High frequency free-wheel / boost diode

 Robust high-voltage periphery

 Ultrafast high voltage switching independent of

temperature

Description

ST's 1200 V high-performance rectifier is

specifically designed to be used in photo-voltaic

inverters or in applications where negligible

switching losses are required.

The STPSC6H12 helps to increase the

application efficiency yield by up to 2% thanks to

its ability to work at high frequency whatever the

temperature.

The central lead of the DPAK package is removed

to meet the IEC60664 and UL 840 standard

requirements for a higher voltage.

These characteristics make it the best-in-class

1200 V diode.

Table 1. Device summary

Symbol

Value

IF(AV)

6 A

VRRM

1200 V

Tj (max.)

175 °C

VF (6 A, 25 °C) typ.

1.55 V

Cj (300 V) typ.

30 pF

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