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STPSC6H12 bảng dữ liệu(PDF) 1 Page - STMicroelectronics |
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1 / 8 page This is information on a product in full production. September 2016 DocID024631 Rev 5 1/8 8 STPSC6H12 1200 V power Schottky silicon carbide diode Datasheet - production data Features High frequency free-wheel / boost diode Robust high-voltage periphery Ultrafast high voltage switching independent of temperature Description ST's 1200 V high-performance rectifier is specifically designed to be used in photo-voltaic inverters or in applications where negligible switching losses are required. The STPSC6H12 helps to increase the application efficiency yield by up to 2% thanks to its ability to work at high frequency whatever the temperature. The central lead of the DPAK package is removed to meet the IEC60664 and UL 840 standard requirements for a higher voltage. These characteristics make it the best-in-class 1200 V diode. Table 1. Device summary Symbol Value IF(AV) 6 A VRRM 1200 V Tj (max.) 175 °C VF (6 A, 25 °C) typ. 1.55 V Cj (300 V) typ. 30 pF www.st.com |
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