STFI15N95K5 datasheet(3/13 Pages) STMICROELECTRONICS

tên linh kiện	STFI15N95K5

Giải thích chi tiết về linh kiện	N-channel 950 V, 0.41 廓 typ., 12 A MDmesh??K5 Power MOSFET in a I짼PAKFP package

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STFI15N95K5

Electrical ratings

DocID029528 Rev 1

3/13

1

Electrical ratings

Table 2: Absolute maximum ratings

Symbol

Parameter

Value

Unit

VGS

Gate-source voltage

± 30

V

ID(1)

Drain current (continuous) at TC = 25 °C

12

A

ID(1)

Drain current (continuous) at TC = 100 °C

7.6

A

IDM(2)

Drain current pulsed

48

A

PTOT

Total dissipation at TC = 25 °C

30

W

ESD

Gate-

source human body model (R= 1,5 kΩ, C = 100 pF)

2

kV

VISO

Insulation withstand voltage (RMS) from all three leads to external

heat sink (t=1 s;TC=25 °C)

2500

V

dv/dt (3)

Peak diode recovery voltage slope

4.5

V/ns

dv/dt (4)

MOSFET dv/dt ruggedness

50

Tj

Operating junction temperature range

- 55 to 150

°C

Tstg

Storage temperature range

Notes:

(1)Limited by maximum junction temperature.

(2)Pulse width limited by safe operating area.

(3)ISD ≤ 12 A, di/dt ≤ 100 A/μs, VDS (peak) ≤ V(BR)DSS

(4)VDS ≤ 760 V

Table 3: Thermal data

Symbol

Parameter

Value

Unit

Rthj-case

Thermal resistance junction-case

4.2

°C/W

Rthj-amb

Thermal resistance junction-ambient

62.5

°C/W

Table 4: Avalanche characteristics

Symbol

Parameter

Value

Unit

IAR

Avalanche current, repetitive or not repetitive (pulse width

limited by Tjmax)

4

A

EAS

Single pulse avalanche energy (starting Tj = 25 °C, ID = IAR,

VDD = 50 V)

124

mJ

Số phần tương tự - STFI15N95K5

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
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