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 2002 Microchip Technology Inc.
DS21705A-page 3
MCP73826
1.0
ELECTRICAL
CHARACTERISTICS
1.1
Maximum Ratings*
VIN ................................................................................... -0.3V to 6.0V
All inputs and outputs w.r.t. GND ................-0.3 to (VIN+0.3)V
Current at VDRV.......................................................... +/-1 mA
Maximum Junction Temperature, T
J.............................. 150°C
Storage temperature .....................................-65°C to +150°C
ESD protection on all pins
..................................................≥ 4kV
*Notice: Stresses above those listed under “Maximum Ratings” may
cause permanent damage to the device. This is a stress rating only and
functional operation of the device at those or any other conditions
above those indicated in the operational listings of this specification is
not implied. Exposure to maximum rating conditions for extended peri-
ods may affect device reliability.
PIN FUNCTION TABLE
DC CHARACTERISTICS: MCP73826-4.1, MCP73826-4.2
TEMPERATURE SPECIFICATIONS
Pin
Name
Description
1
SHDN
Logic Shutdown
2
GND
Battery Management
0V Reference
3
VBAT
Cell Voltage Monitor Input
4VDRV
Drive Output
5VIN
Battery Management
Input Supply
6VSNS
Charge Current Sense Input
Unless otherwise specified, all limits apply for VIN = [VREG(typ)+1V], RSENSE = 500 mΩ, TA = -20°C to +85°C.
Typical values are at +25°C. Refer to Figure 1-1 for test circuit.
Parameter
Sym
Min
Typ
Max
Units
Conditions
Supply Voltage
VIN
4.5
5.5
V
Supply Current
IIN
0.5
260
15
560
µA
Shutdown, VSHDN = 0V
Constant Voltage Mode
Voltage Regulation (Constant Voltage Mode)
Regulated Output Voltage
VREG
4.059
4.158
4.1
4.2
4.141
4.242
V
V
MCP73826-4.1 only
MCP73826-4.2 only
Line Regulation
∆VBAT
-10
10
mV
VIN = 4.5V to 5.5V,
IOUT = 75 mA
Load Regulation
∆VBAT
-1
+0.2
1
mV
IOUT = 10 mA to 75 mA
Output Reverse Leakage Current
ILK
—8
µA
VIN=Floating, VBAT=VREG
External MOSFET Gate Drive
Gate Drive Current
IDRV
0.08
1
mA
mA
Sink, CV Mode
Source, CV Mode
Gate Drive Minimum Voltage
VDRV
—1.6
V
Current Regulation (Controlled Current Mode)
Current Sense Gain
ACS
—100
dB
∆(VSNS-VDRV) / ∆VBAT
Current Limit Threshold
VCS
40
53
75
mV
(VIN-VSNS) at IOUT
Foldback Current Scale Factor
K
0.43
A/A
Shutdown Input - SHDN
Input High Voltage Level
VIH
40
%VIN
Input Low Voltage Level
VIL
——
25
%VIN
Input Leakage Current
ILK
——
1
µA
VSHDN = 0V to 5.5V
Unless otherwise specified, all limits apply for VIN = 4.5V-5.5V
Parameters
Sym
Min
Typ
Max
Units
Conditions
Temperature Ranges
Specified Temperature Range
TA
-20
+85
°C
Operating Temperature Range
TA
-40
+125
°C
Storage Temperature Range
TA
-65
+150
°C
Thermal Package Resistances
Thermal Resistance, 6-Pin SOT-23A
θJA
—230
°C/W
4-Layer JC51-7 Standard
Board, Natural Convection


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