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STD10N60DM2
Electrical characteristics
DocID029382 Rev 1
5/14
Table 8: Source-drain diode
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
ISD(1)
Source-drain current
-
8
A
ISDM(2)
Source-drain current
(pulsed)
-
32
A
VSD(3)
Forward on voltage
VGS = 0 V, ISD = 8 A
-
1.6
V
trr
Reverse recovery time
ISD = 8 A, di/dt = 100 A/µs,
VDD = 60 V (see Figure 16:
"Test circuit for inductive load
switching and diode recovery
times")
-
90
ns
Qrr
Reverse recovery charge
-
225
µC
IRRM
Reverse recovery current
-
5
A
trr
Reverse recovery time
ISD = 8 A, di/dt = 100 A/µs,
VDD = 60 V, Tj = 150 °C (see
Figure 16: "Test circuit for
inductive load switching and
diode recovery times")
-
190
ns
Qrr
Reverse recovery charge
-
684
nC
IRRM
Reverse recovery current
-
7.2
A
Notes:
(1) Limited by maximum junction temperature.
(2) Pulse width is limited by safe operating area.
(3) Pulse test: pulse duration = 300 µs, duty cycle 1.5%.
Table 9: Gate-source Zener diode
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
V(BR)GSO
Gate-source breakdown voltage
IGS = ±250 µA, ID = 0 A
±30
-
-
V
The built-in back-to-back Zener diodes are specifically designed to enhance the ESD
performance of the device. The Zener voltage facilitates efficient and cost-effective device
integrity protection, thus eliminating the need for additional external componentry.


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