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MTB9D0P03H8-0-T6-G bảng dữ liệu(PDF) 10 Page - Cystech Electonics Corp.

tên linh kiện MTB9D0P03H8-0-T6-G
Giải thích chi tiết về linh kiện  P-Channel Enhancement Mode Power MOSFET
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nhà sản xuất  CYSTEKEC [Cystech Electonics Corp.]
Trang chủ  http://www.cystekec.com
Logo CYSTEKEC - Cystech Electonics Corp.

MTB9D0P03H8-0-T6-G bảng dữ liệu(HTML) 10 Page - Cystech Electonics Corp.

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CYStech Electronics Corp.
Spec. No. : C050H8
Issued Date : 2017.04.05
Revised Date : 2017.04.10
Page No. : 10/11
MTB9D0P03H8
CYStek Product Specification
Recommended wave soldering condition
Product
Peak Temperature
Soldering Time
Pb-free devices
260 +0/-5
°C
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Sn-Pb eutectic Assembly
Pb-free Assembly
Average ramp-up rate
(Tsmax to Tp)
3
°C/second max.
3
°C/second max.
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
100
°C
150
°C
60-120 seconds
150
°C
200
°C
60-180 seconds
183
°C
60-150 seconds
Time maintained above:
−Temperature (TL)
217
°C
− Time (tL)
60-150 seconds
Peak Temperature(TP)
240 +0/-5
°C
260 +0/-5
°C
Time within 5
°C of actual peak
10-30 seconds
20-40 seconds
temperature(tp)
Ramp down rate
6
°C/second max.
6
°C/second max.
6 minutes max.
8 minutes max.
Time 25
°C to peak temperature
Note :1. All temperatures refer to topside of the package, measured on the package body surface.
2.For devices mounted on FR-4 PCB of 1.6mm or equivalent grade PCB. If other grade PCB is used, care
should be taken to match the coefficients of thermal expansion between components and PCB. If they are
not matched well, the solder joints may crack or the bodies of the parts may crack or shatter as the assembly
cools.


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