MTB020N03V8-0-T6-G datasheet(2/9 Pages) CYSTEKEC

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CYStech Electronics Corp.

Spec. No. : C737V8

Issued Date : 2017.03.06

Revised Date :

Page No. : 2/9

MTB020N03V8

CYStek Product Specification

Absolute Maximum Ratings (TC=25

°C, unless otherwise noted)

Parameter

Symbol

Limits

Unit

Drain-Source Voltage

VDS

30

Gate-Source Voltage

VGS

±

20

V

Continuous Drain Current @ VGS=10V, TC=25

°C

18

Continuous Drain Current @ VGS=10V, TC=100

°C

11.4

Continuous Drain Current @ VGS=10V, TA=25

°C

10

Continuous Drain Current @ VGS=10V, TA=70

°C

ID

8

Pulsed Drain Current *1

IDM

72

Single Pulse Avalanche Current

IAS

18

A

Single Pulse Avalanche Current @ L=0.1mH, VGS=10V, VDD=15V *2

EAS

16.2

mJ

Total Power Dissipation @TC=25℃

8

Total Power Dissipation @TA=25℃

PD

2.5

W

Operating Junction and Storage Temperature Range

Tj, Tstg

-55~+150

°C

Note : *1

. Pulse width limited by maximum junction temperature

*2. 100% tested by conditions of L=0.1mH, IAS=6A, VGS=10V, VDD=15V

Thermal Data

Parameter

Symbol

Value

Unit

Thermal Resistance, Junction-to-case, max

RθJC

16

Thermal Resistance, Junction-to-ambient, max

RθJA

50 *

°C/W

* Surface mounted on a 1 in² pad of 2oz copper.

Electrical Characteristics

(Tj=25

°C, unless otherwise noted)

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

Static

BVDSS

30

-

V

VGS=0V, ID=250μA

ΔBVDSS/ΔTj

-

0.02

-

V/℃

Reference to 25 , I

℃ D

=1mA

VGS(th)

1

-

2.5

V

VDS=VGS, ID=250μA

IGSS

-

±100

nA

VGS=±20V, VDS=0V

-

1

VDS=24V, VGS=0V

IDSS

-

25

μA

VDS=24V, VGS=0V, Tj=125℃

-

14

18

ID=10A, VGS=10V

*RDS(ON)

-

17.5

25

m

Ω

ID=8A, VGS=4.5V

*GFS

-

3.8

-

S

VDS=10V, ID=1A

Dynamic

Ciss

-

492

-

Coss

-

67

-

Crss

-

49

-

pF

VDS=25V, VGS=0V, f=1MHz

td(ON)

-

5.8

-

tr

-

16.6

-

td(OFF)

-

31.2

-

tf

-

7.6

-

ns

VDS=15V, ID=1A, VGS=10V, RG=6Ω

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