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BAT960 bảng dữ liệu(PDF) 2 Page - NXP Semiconductors |
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BAT960 bảng dữ liệu(HTML) 2 Page - NXP Semiconductors |
2 / 8 page 2003 May 01 2 Philips Semiconductors Product specification Schottky barrier diode BAT960 FEATURES • High current capability • Very low forward voltage • Ultra small plastic SMD package • Flat leads: excellent coplanarity and improved thermal behaviour. APPLICATIONS • Ultra high-speed switching • rectification • DC/DC conversion • Switch mode power supply • Inverse polarity protection. GENERAL DESCRIPTION Planar Schottky barrier diode with an integrated guard ring for stress protection in a SOT666 ultra small SMD plastic package. PINNING PIN DESCRIPTION 1 cathode 2 cathode 3 anode 4 anode 5 cathode 6 cathode handbook, halfpage 12 3 4 5 6 1, 2 5, 6 3, 4 MHC310 Fig.1 Simplified outline (SOT666) and symbol. Marking code: B9. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). Note 1. Only valid, if pins 3 and 4 are connected in parallel. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VR continuous reverse voltage − 23 V IF continuous forward current − 1A IFSM non-repetitive peak forward current t = 8.3 ms half sinewave; JEDEC method; note 1 − 8A Tstg storage temperature −65 +150 °C Tj junction temperature − 125 °C Tamb operating ambient temperature −65 +125 °C |
Số phần tương tự - BAT960 |
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Mô tả tương tự - BAT960 |
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