(CONTINUED ON REVERSE SIDE)

R0

2N2411

2N2412

PNP SILICON TRANSISTOR

JEDEC TO-18 CASE

DATA SHEET

DESCRIPTION:

The CENTRAL SEMICONDUCTOR 2N2411, 2N2412 types are PNP Saturated Switching Transistors designed

for high speed switching applications.

MAXIMUM RATINGS:

SYMBOL

UNITS

Collector-Base Voltage

VCBO

25

V

Collector-Emitter Voltage

VCEO

15

V

Emitter-Base Voltage

VEBO

5.0

V

Collector Current

IC

100

mA

Power Dissipation

PD

0.5

W

Power Dissipation (TC=25°C)

PD

1.2

W

Operating and Storage

Junction Temperature

TJ,Tstg

-65 to +200

°C

Thermal Resistance

ΘJA

350

°C/W

Thermal Resistance

ΘJC

146

°C/W

ELECTRICAL CHARACTERISTICS:

2N2411

2N2412

SYMBOL

TEST CONDITIONS

MIN

MAX

MIN

MAX

UNITS

ICES

VCE=15V

10

10

nA

ICES

VCE=15V, TA=150°C

10

10

µA

IEBO

VEB=5.0V

10

µA

BVCBO

IC=10µA

25

25

V

BVCEO

IC=10mA

15

15

V

VCE(SAT)

IC=10mA, IB=1.0mA

0.2

0.2

V

VBE(SAT)

IC=10mA, IB=1.0mA

0.7

0.9

0.7

0.9

V

hFE

VCE=0.5V, IC=50µA

10

20

hFE

VCE=0.5V, IC=10mA

20

60

40

120

hFE

VCE=0.5V, IC=10mA, TA=-55°C

10

20

hFE

VCE=1.0V, IC=50mA

10

20

hfe

VCE=10V, IC=10mA, f=100MHz

1.4

1.4

Cob

VCB=5.0V, IE=0, f=1.0MHz

5.0

5.0

pF

Cib

VEB=0.5V, IC=0, f=1.0MHz

8.0

8.0

pF