ES1A-M3, ES1B-M3, ES1C-M3, ES1D-M3

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Vishay General Semiconductor

Revision: 19-Feb-15

3

Document Number: 89273

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

Fig. 1 - Maximum Forward Current Derating Curve

Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current

Fig. 3 - Typical Instantaneous Forward Characteristics

Fig. 4 - Typical Reverse Leakage Characteristics

Fig. 5 - Typical Junction Capacitance

Fig. 6 - Typical Thermal Impedance

0

1.2

80

90

100

110

120

130

140

150

0.8

1.0

0.2

0.4

0.6

Lead Temperature (°C)

Resistive or Inductive Load

P.C.B. Mounted on

0.2" x 0.2" (5.0 mm x 5.0 mm)

Copper Pad Areas

1

10

100

5

10

15

20

25

30

0

8.3 ms Single Half Sine-Wave

Number of Cycles at 60 Hz

T

T

T

T

100

10

1

0.1

0.01

Instantaneous Forward Voltage (V)

0.2

0.4

0.6

0.8

1.0

1.2

1.4

T

T

T

T

Percent of Rated Peak Reverse Voltage (%)

0

20406080

100

1000

100

10

1

0.1

f = 1.0 MHz

Reverse Voltage (V)

14

12

10

8

6

4

2

0

0.1

1

10

100

Mounted on 0.2" x 0.2" (5 mm x 7 mm)

Copper Pad Areas

100

10

1

0.1

1

10

100

t - Pulse Duration (s)