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LMX2372TM bảng dữ liệu(PDF) 5 Page - National Semiconductor (TI)

[Old version datasheet] Texas Instruments acquired National semiconductor.
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LMX2372TM bảng dữ liệu(HTML) 5 Page - National Semiconductor (TI)

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Electrical Characteristics (V
CC = Vp = Vµc = 3.0V; −40˚C < TA < 85˚C except as specified). (Continued)
CHARGE PUMP
Value
Unit
Symbol
Parameter
Conditions
Min
Typ
Max
ICP
o-source
Main and Auxiliary Charge
Pump Output Current (Note 4)
VCP
o = Vp/2, ICPo_4X = 0
1.0
mA
ICP
o-sink
VCP
o = Vp/2, ICPo_4X = 0
−1.0
mA
ICP
o-source
VCP
o = Vp/2, ICPo_4X = 1
4.0
mA
ICP
o-sink
VCP
o = Vp/2, ICPo_4X = 1
−4.0
mA
ICP
o-TRI
Charge Pump TRI-STATE®
Current
0.5
≤ VCP
o ≤ Vp − 0.5,
−40˚C < T
A < 85˚C
−2.5
0.1
2.5
nA
ICP
o-sink vs
ICP
o-source
CP Sink vs Source Mismatch
VCP
o = Vp/2, TA = 25˚C
310
%
ICP
o vs
VCP
o
CP Current vs Voltage
0.5
≤ VCP
o ≤ Vp − 0.5, TA = 25˚C
815
%
ICP
o vs TA
CP Current vs Temperature
VCP
o = Vp/2, −40˚C < TA < 85˚C
8
%
DIGITAL INTERFACE (DATA, CLOCK, LE)
Value
Unit
Symbol
Parameter
Conditions
Min
Typ
Max
V
IH
High-Level Input Voltage
Vµc = 1.72V to 5.5V
0.8 Vµc
V
V
IL
Low-Level Input Voltage
Vµc = 1.72V to 5.5V
0.2 Vµc
V
I
IH
High-Level Input Current
V
IH = Vµc = 5.5V
−1.0
1.0
µA
I
IL
Low-Level Input Current
V
IL = 0, Vµc = 5.5V
−1.0
1.0
µA
V
OL
Low-Level Output Current
I
OL = 1.0 mA, VEXT = 1.8V (Note
5)
0.1
0.4
V
MICROWIRE TIMING
Value
Unit
Symbol
Parameter
Conditions
Min
Typ
Max
t
CS
Data to Clock Setup Time
See Data Input Timing
50
ns
t
CH
Data to Clock Hold Time
See Data Input Timing
20
ns
t
CWH
Clock Pulse Width High
See Data Input Timing
50
ns
t
CWL
Clock Pulse Width Low
See Data Input Timing
50
ns
t
ES
Clock to Load Enable Setup
Time
See Data Input Timing
50
ns
t
EW
Load Enable Pulse Width
See Data Input Timing
50
ns
Note 4: Main and Auxiliary Charge Pump magnitude are controlled by Main_ICPo_4X and Aux_ICPo_4X bits respectively.
Note 5: Lock Detect open drain output only pulled up to VEXT. Typically VEXT = VCC.
1.0 Functional Description
The basic phase-lock-loop (PLL) configuration consists of a high-stability crystal reference oscillator, a frequency synthesizer
such as the National Semiconductor LMX2370/2371/2372, a voltage controlled oscillator (VCO), and a passive loop filter. The fre-
quency synthesizer includes a phase detector, a current mode charge pump, as well as programmable reference [R] and feed-
back [N] frequency dividers. The VCO frequency is established by dividing the crystal reference signal down via the R-counter to
obtain a comparison reference frequency. This reference signal (
f
R) is then presented to the input of a phase/frequency detector
and compared with the feedback signal (
f
N), which is obtained by dividing the VCO frequency down by way of the N-counter. The
phase/frequency detector’s current source output pumps charge into the loop filter, which then integrates into the VCO’s control
voltage. The function of the phase/frequency comparator is to adjust the control voltage presented to the VCO until the feedback
signal frequency and phase match that of the reference signal. When this “Phase-Locked” condition exists, the VCO frequency
will be N times that of the comparison frequency, where N is the integer divide ratio.
1.1 REFERENCE OSCILLATOR INPUT
The reference oscillator frequency for the Main and Auxiliary PLLs is provided from the external reference through the OSC
in pin.
OSC
in can operate up to 50 MHz with input sensitivity of 0.5 VPP. The OSCin pin drives both the Main R-counter and the Auxiliary
R-counter. The input has a V
CC/2 input threshold that can be driven from an external CMOS or TTL logic gate. Typically, the OSCin
is connected to the output of a crystal oscillator.
1.2 REFERENCE DIVIDERS (R-COUNTERS)
The Main and Auxiliary R-counters are both clocked through the oscillator block in common. The maximum frequency is 50 MHz.
Both R-counters are CMOS design and 15-bit in length with programmable divider ratio from 2 to 32,767.
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