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LMX2346SLBX bảng dữ liệu(PDF) 6 Page - National Semiconductor (TI)

[Old version datasheet] Texas Instruments acquired National semiconductor.
tên linh kiện LMX2346SLBX
Giải thích chi tiết về linh kiện  PLLatinum??Frequency Synthesizer for RF Personal Communications
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nhà sản xuất  NSC [National Semiconductor (TI)]
Trang chủ  http://www.national.com
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LMX2346SLBX bảng dữ liệu(HTML) 6 Page - National Semiconductor (TI)

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Electrical Characteristics (Continued)
The following conditions apply; V
CC = 3.0V, VP = 3.0V; −40˚C
≤ T
A
≤ 85˚C, unless specified differently.
Symbol
Parameter
Conditions
Min
Typ
Max
Units
LOGICAL INTERFACE (CE, CLOCK, LE, DATA, LD)
V
IH
High-level Input Voltage
0.8 V
CC
V
V
IL
Low-level Input Voltage
0.2 V
CC
V
I
IH
High-level Input Current
V
IH =VCC = 5.5V
−1.0
1.0
µA
I
IL
Low-level Input Current
V
IL = 0V, VCC = 5.5V
−1.0
1.0
µA
V
OH
High-level Output Voltage
I
OH = −500 µA
V
CC − 0.4
V
V
OL
Low-level Output Voltage
I
OL = 500 µA
0.4
V
MICROWIRE INTERFACE (CLOCK, LE, DATA)
t
CS
Data to Clock Set Up Time
(Note 5)
50
ns
t
CH
Data to Clock Hold Time
(Note 5)
10
ns
t
CWH
Clock Pulse Width High
(Note 5)
50
ns
t
CWL
Clock Pulse Width Low
(Note 5)
50
ns
t
ES
Clock to Latch Enable Set Up
Time
(Note 5)
50
ns
t
EW
Latch Enable Pulse Width
(Note 5)
50
ns
PHASE NOISE
L(f)
Single Side-Band Phase Noise
F
IN = 900 MHz
Fφ = 200 kHz
F
OSC = 10 MHz
V
OSC = 1.0 VPP
T
A = 25˚C
(Note 3)
−91
dBc/Hz
F
IN = 1750 MHz
Fφ = 200 kHz
F
OSC = 10 MHz
V
OSC = 1.0 VPP
T
A = 25˚C
(Notes 3, 9)
−86
dBc/Hz
F
IN = 1960 MHz
Fφ = 200 kHz
F
OSC = 10 MHz
V
OSC = 1.0 VPP
T
A = 25˚C
(Note 3)
−85
dBc/Hz
F
IN = 2450 MHz
Fφ = 200 kHz
F
OSC = 10 MHz
V
OSC = 1.0 VPP
T
A = 25˚C
(Note 3)
−83
dBc/Hz
L
N(f)
Normalized Single Side-Band
Phase Noise
Fφ = 200 kHz
F
OSC = 10 MHz
V
OSC = 1.0 VPP
T
A = 25˚C
(Note 8)
−164.5
dBc/Hz
Note 1: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Recommended Operating Conditions indicate conditions for
which the device is intended to be functional. For guaranteed specifications and test conditions see the Electrical Characteristics.
Note 2: This device is a high performance RF integrated circuit with an ESD rating <2 kV. Handling and assembly of this device should only be done at ESD
protected workstations.
Note 3: Phase Noise is measured using a reference evaluation board with a loop bandwidth of approximately 12 kHz. The phase noise specification is the
composite average of 3 measurements made at frequency offsets of 2.0, 2.5 and 3.0 kHz.
Note 4: See Charge Pump Measurement Definitions for detail on how these measurements are made.
Note 5: See Serial Input Data Timing.
Note 6: See FIN Sensitivity Test Setup.
Note 7: See OSCin Sensitivity Test Setup.
Note 8: Normalized Single-Side Band Phase Noise is defined as: LN(f) = L(f) − 20 log (FIN/Fφ), where L(f) is defined as the Single Side-Band Phase Noise.
Note 9: This parameter is derived from Normalized Single Side-Phase Noise, Ln(f).
Note 10: For FOSC frequencies below 10 MHz, it is recommended that the rise time of the signal does not exceed 25ns.
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