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LMX2332A bảng dữ liệu(PDF) 5 Page - National Semiconductor (TI)

[Old version datasheet] Texas Instruments acquired National semiconductor.
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Charge Pump Characteristics
V
CC = 3.0V, VP = 3.0V; −40˚C < TA < 85˚C, except as specified
Symbol
Parameter
Conditions
Value
Units
Min
Typ
Max
I
Do-SOURCE
Charge Pump Output Current
V
Do =VP/2, ICPo = HIGH**
−4.5
mA
I
Do-SINK
V
Do =VP/2, ICPo = HIGH**
4.5
mA
I
Do-SOURCE
V
Do =VP/2, ICPo = LOW**
−1.125
mA
I
Do-SINK
V
Do =VP/2, ICPo = LOW**
1.125
mA
I
Do-TRI
Charge Pump TRI-STATE
Current
0.5V
≤ V
Do ≤ VP − 0.5V
−40˚c < T
A < 85˚C
−2.5
2.5
nA
I
Do-SINK vs
I
Do-SOURCE
CP Sink vs
Source Mismatch (Note 4)
V
Do =VP/2
T
A = 25˚C
310
%
I
Do vs VDo
CP Current vs Voltage
(Note 3)
0.5V
≤ V
Do ≤ VP − 0.5V
T
A = 25˚C
10
15
%
I
Do vs TA
CP Current vs Temperature
(Note 5)
V
Do =VP/2
−40˚C < T
A < 85˚C
10
%
** See PROGRAMMABLE MODES for ICPo description.
Note 3: See charge pump current specification definitions below.
Note 4: See charge pump current specification definitions below.
Note 5: See charge pump current specification definitions below.
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