công cụ tìm kiếm bảng dữ liệu linh kiện điện tử |
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LMX2324TM bảng dữ liệu(PDF) 3 Page - National Semiconductor (TI) |
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LMX2324TM bảng dữ liệu(HTML) 3 Page - National Semiconductor (TI) |
3 / 12 page Absolute Maximum Ratings (Note 1) If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/ Distributors for availability and specifications. Power Supply Voltage (V CC) −0.3V to 6.5V Power Supply for Charge Pump (V P)VCC to 6.5V Voltage on Any Pin with GND = 0V (V I) −0.3V to V CC + 0.3V Storage Temperature Range (T S) −65˚C to +150˚C Lead Temperature (solder, 4 sec.) (T L) +260˚C ESD - Human Body Model (Note 2) 2 kV Recommended Operating Conditions (Note 1) Power Supply Voltage (V CC) 2.7V to 5.5V Power Supply for Charge Pump (V P)VCC to 5.5V Operating Temperature (T A) −40˚C to +85˚C Note 1: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Recommended Operating Conditions indicate condi- tions for which the device is intended to be functional, but do not guarantee specific performance limits. For guaranteed specifications and test condi- tions, see the Electrical Characteristics. Note 2: This device is a high performance RF integrated circuit and is ESD sensitive. Handling and assembly of this device should on be done on ESD protected workstations. Electrical Characteristics (V CC = 3V, VP = 3V; −40˚C < TA < 85˚C except as specified). Symbol Parameter Conditions Min Typ Max Units GENERAL I CC Power Supply Current V CC = 2.7V to 5.5V 3.5 mA I CC-PWDN Power Down Current 10 µA f IN f IN Operating Frequency 0.1 2.0 GHz OSC in Oscillator Operating Frequency 5 40 MHz f PD Phase Detector Frequency 10 MHz Pf IN Input Sensitivity f INB grounded through a 10 pF capacitor V CC = 3.0V −15 0 dBm V CC = 5.0V −10 0 V OSC Oscillator Sensitivity 0.4 1.0 V CC−0.3 V PP CHARGE PUMP ICP o-source Charge Pump Output Current VCP o =VP/2 −4.0 mA ICP o-sink 4.0 mA ICP o-Tri Charge Pump TRI-STATE Current 0.5 ≤ VCP o ≤ VP - 0.5 T = 25˚C 0.1 nA ICP o vs. VCP o Charge Pump Output Current Variation vs. Voltage (Note 4) 0.5 ≤ VCP o ≤ VP - 0.5 T = 25˚C 10 % ICP o-sink vs. ICP o-source Charge Pump Output Current Sink vs. Source Mismatch (Note 4) VCP o =VP/2 T = 25˚C 5 % ICP o vs. T Charge Pump Output Current Magnitude Variation vs. Temperature (Note 4) VCP o =VP/2 −40˚C ≤ T ≤ +85˚C 10 % DIGITAL INTERFACE (DATA, CLK, LE, CE) V IH High-Level Input Voltage (Note 3) 0.8 V CC V V IL Low-Level Input Voltage (Note 3) 0.2 V CC V I IH High-Level Input Current V IH =VCC = 5.5V −1.0 1.0 µA I IL Low-Level Input Current V IL =0,VCC = 5.5V −1.0 1.0 µA I IH Oscillator Input Current V IH =VCC = 5.5V 100 µA I IL V IL =0,VCC = 5.5V −100 µA MICROWIRE TIMING t CS Data to Clock Set Up Time See Data Input Timing 50 ns t CH Data to Clock Hold Time See Data Input Timing 10 ns t CWH Clock Pulse Width High See Data Input Timing 50 ns t CWL Clock Pulse Width Low See Data Input Timing 50 ns t ES Clock to Enable Set Up Time See Data Input Timing 50 ns t EW Enable Pulse Width See Data Input Timing 50 ns Note 3: Except fIN and OSCin Note 4: See related equations in charge pump current specification definitions www.national.com 3 |
Số phần tương tự - LMX2324TM |
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Mô tả tương tự - LMX2324TM |
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