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BCP69T1G bảng dữ liệu(PDF) 1 Page - ON Semiconductor

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Giải thích chi tiết về linh kiện  PNP Silicon Epitaxial Transistor
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© Semiconductor Components Industries, LLC, 2011
November, 2011 − Rev. 11
1
Publication Order Number:
BCP69T1/D
BCP69T1G, NSVBCP69T1G
PNP Silicon
Epitaxial Transistor
This PNP Silicon Epitaxial Transistor is designed for use in low
voltage, high current applications. The device is housed in the
SOT−223 package, which is designed for medium power surface
mount applications.
Features
High Current: IC = −1.0 A
The SOT−223 Package Can Be Soldered Using Wave or Reflow.
SOT−223 package ensures level mounting, resulting in improved
thermal conduction, and allows visual inspection of soldered joints.
The formed leads absorb thermal stress during soldering, eliminating
the possibility of damage to the die.
NPN Complement is BCP68
AEC−Q101 Qualified and PPAP Capable
NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Collector−Emitter Voltage
VCEO
−20
Vdc
Collector−Base Voltage
VCBO
−25
Vdc
Emitter−Base Voltage
VEBO
−5.0
Vdc
Collector Current
IC
−1.0
Adc
Total Power Dissipation @ TA = 25°C (Note 1)
Derate above 25°C
PD
1.5
12
W
mW/°C
Operating and Storage Temperature Range
TJ, Tstg
−65 to
150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance − Junction−to−Ambient
(Surface Mounted)
RqJA
83.3
°C/W
Lead Temperature for Soldering,
0.0625 in from case
Time in Solder Bath
TL
260
10
°C
s
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Device mounted on a glass epoxy printed circuit board 1.575 in. x 1.575 in.
x 0.059 in.; mounting pad for the collector lead min. 0.93 sq. in.
MEDIUM POWER
PNP SILICON
HIGH CURRENT
TRANSISTOR
SURFACE MOUNT
1
2
3
4
COLLECTOR 2,4
BASE
1
EMITTER 3
http://onsemi.com
SOT−223 (TO−261)
CASE 318E
STYLE 1
AYW
CEG
G
Device
Package
Shipping
ORDERING INFORMATION
BCP69T1G
SOT−223
(Pb−Free)
1000 / Tape & Reel
CE = Specific Device Code
A
= Assembly Location
Y
= Year
W
= Work Week
G
= Pb−Free Package
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
MARKING
DIAGRAM
(*Note: Microdot may be in either location)
NSVBCP69T1G
SOT−223
(Pb−Free)
1000 / Tape & Reel


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