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SS1200 bảng dữ liệu(PDF) 1 Page - Galaxy Semi-Conductor Holdings Limited |
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SS1200 bảng dữ liệu(HTML) 1 Page - Galaxy Semi-Conductor Holdings Limited |
1 / 3 page Production specification SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS SS1150-- SS1200 Document Number: SMA406AA www.gmicroelec.com 1 FEATURES Metal-Semiconductor junction with guard ring Epitaxial construction Low forward voltage drop, low switching losses High surge capacity For use in low voltage, high frequency inverters free wheeling, and polarity protection applications MECHANICAL DATA Case: SMA molded plastic body Terminals: Axial lead , solderable per MIL-STD750, Method 2026 Polarity: As marked Maximum Ratings (@TA = 25°C unless otherwise specified) Characteristic Symbol SS1150 SS1200 UNITS Device marking code SS1150 SS1200 Maximum repetitive peak reverse voltage VRRM 150 200 V Maximum RMS voltage VRWS 135 140 V Maximum DC blocking voltage VDC 150 200 V Maximum average forward rectified current at TL=110℃ IF(AV) 1.0 A Peak forward surge current 8.3ms single half-sine-wave IFSM 35 A Thermal Characteristics Characteristic Symbol SS1150 SS1200 UNITS Typical thermal resistance (NOTE 1) RΘJA RΘJL 88 28 ℃/W Typical junction capacitance (NOTE 2) CJ 90 pF Operating temperature range TJ -55 --- +150 ℃ Storage temperature range TSTG -55 --- +150 ℃ Electrical Characteristics (@TA = 25°C unless otherwise specified) Characteristic Symbol SS1150 SS1200 UNITS Maximum instantaneous forward voltage at IFM=1.0A VF 0.95 V Maximum DC reverse current TJ=25 ℃ at rated DC blocking voltage TJ=100℃ IR 0.1 10 m A Note:1、P.C.B. mounted with 0.2 x 0.2” (5.0 x 5.0mm) copper pad areas 2、1.Measured at 1MHz and applied reverse voltage of 4.0V D.C Pb Lead-free |
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