STW18NK80Z datasheet(3/9 Pages) STMICROELECTRONICS

tên linh kiện	STW18NK80Z

Giải thích chi tiết về linh kiện	N-CHANNEL 800V - 0.34??- 19A TO-247 Zener-Protected SuperMESH?줡ower MOSFET

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STW18NK80Z

ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)

ON/OFF

DYNAMIC

SOURCE DRAIN DIODE

Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.

2. Pulse width limited by safe operating area.

3. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80%

VDSS.

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source

Breakdown Voltage

ID =1mA, VGS = 0

800

V

IDSS

Zero Gate Voltage

Drain Current (VGS =0)

VDS = Max Rating

VDS = Max Rating, TC = 125 °C

1

50

µA

IGSS

Gate-body Leakage

Current (VDS =0)

VGS = ± 20V

±10

µA

VGS(th)

Gate Threshold Voltage

VDS =VGS,ID = 150 µA

3

3.75

4.5

V

RDS(on)

Static Drain-source On

Resistance

VGS =10V, ID = 10 A

0.34

0.38

Ω

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

gfs (1)

Forward Transconductance

VDS =15V, ID =10A

19

S

Ciss

Coss

Crss

Input Capacitance

Output Capacitance

Reverse Transfer

Capacitance

VDS = 25V,f= 1MHz,VGS = 0

6100

500

100

pF

Coss eq. (3)

Equivalent Output

Capacitance

VGS =0V, VDS = 0V to 640V

240

pF

td(on)

tr

td(off)

tf

Turn-on Delay Time

Rise Time

Turn-off Delay Time

Fall Time

VDD =400 V, ID =9 A

RG = 4.7Ω VGS =10 V

(Resistive Load see, Figure 3)

46

32

140

32

ns

Qg

Qgs

Qgd

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

VDD =640V, ID =18 A,

VGS =10V

192

34

102

250

nC

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

ISD

ISDM (2)

Source-drain Current

Source-drain Current (pulsed)

19

76

A

VSD (1)

Forward On Voltage

ISD =19A,VGS =0

1.6

V

trr

Qrr

IRRM

Reverse Recovery Time

Reverse Recovery Charge

Reverse Recovery Current

ISD = 18 A, di/dt = 100A/µs

VDD =40 V,Tj = 25°C

(see test circuit, Figure 5)

920

11

24

ns

µC

A

trr

Qrr

IRRM

Reverse Recovery Time

Reverse Recovery Charge

Reverse Recovery Current

ISD = 18 A, di/dt = 100A/µs

VDD =40 V,Tj = 150°C

(see test circuit, Figure 5)

1160

15

25.8

ns

µC

A

Số phần tương tự - STW18NK80Z

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
STMicroelectronics	STW18NK80Z	269Kb / 14P	N-channel 800V - 0.34廓 - 19A - TO-247 Zener-protected SuperMESH??Power MOSFET
STMicroelectronics	STW18NK80Z	269Kb / 14P	N-channel 800V - 0.34廓 - 19A - TO-247 Zener-protected SuperMESH??Power MOSFET

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Mô tả tương tự - STW18NK80Z

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