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2 / 9 page STW18NK80Z 2/9 ABSOLUTE MAXIMUM RATINGS ( ) Pulse width limited by safe operating area (1) ISD ≤19A, di/dt ≤300A/µs, VDD ≤ 800V , Tj ≤ TJMAX. (*) Limited only by maximum temperature allowed THERMAL DATA AVALANCHE CHARACTERISTICS GATE-SOURCE ZENER DIODE PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components. Symbol Parameter Value Unit VDS Drain-source Voltage (VGS =0) 800 V VDGR Drain-gate Voltage (RGS =20kΩ) 800 V VGS Gate- source Voltage ± 30 V ID Drain Current (continuous) at TC = 25°C 19 A ID Drain Current (continuous) at TC = 100°C 12 A IDM ( ) Drain Current (pulsed) 76 A PTOT Total Dissipation at TC = 25°C 350 W Derating Factor 2.4 W/°C VESD(G-S) Gate source ESD(HBM-C=100pF, R=1.5K Ω) 6000 V dv/dt (1) Peak Diode Recovery voltage slope 4.5 V/ns Tj Tstg Operating Junction Temperature Storage Temperature -55 to 150 °C Rthj-case Thermal Resistance Junction-case Max 0.36 °C/W Rthj-amb Tl Thermal Resistance Junction-ambient Max Maximum Lead Temperature For Soldering Purpose 50 300 °C/W °C Symbol Parameter Max Value Unit IAR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) 19 A EAS Single Pulse Avalanche Energy (starting Tj = 25 °C, ID =IAR,VDD =50 V) 700 mJ Symbol Parameter Test Conditions Min. Typ. Max. Unit BVGSO Gate-Source Breakdown Voltage Igs=± 1mA (Open Drain) 30 V |
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