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STTH3012W bảng dữ liệu(PDF) 1 Page - Thinki Semiconductor Co., Ltd.

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Giải thích chi tiết về linh kiện  30 Ampere,1200Volt SwitchMode Single Fast Recovery Epitaxial Diode
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STTH3012W bảng dữ liệu(HTML) 1 Page - Thinki Semiconductor Co., Ltd.

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TO-247-2L
®
STTH3012W
Pb Free Plating Product
STTH3012W
30 Ampere,1200Volt SwitchMode Single Fast Recovery Epitaxial Diode
Pb
© 2006 Thinki Semiconductor Co.,Ltd.
http://www.thinkisemi.com/
Page 1/3
Internal Configuration
Cathode(Bottom Side Metal Heatsink)
Cathode
Anode
Base Backside
·
Ultrafast Recovery Time
·
Soft Recovery Characteristics
·
Low Recovery Loss
·
Low Forward Voltage
·
High Surge Current Capability
·
Low Leakage Current
APPLICATION
GENERAL DESCRIPTION
· Freewheeling, Snubber, Clamp
· Inversion Welder
· PFC
· Plating Power Supply
· Ultrasonic Cleaner and Welder
· Converter & Chopper
· UPS
PRODUCT FEATURE
STTH3012W using the lastest FRED FAB process(planar passivation pellet) with ultrafast and soft recovery characteristics.
Rev.05
ABSOLUTE MAXIMUM RATINGS
TC
ELECTRICAL CHARACTERISTICS
T
=25°C unless otherwise specified
C =25°C unless otherwise specified
Symbol
Parameter
Test Conditions
Values
Unit
V
Maximum D.C. Reverse Voltage
R
1200
V
V
Maximum Repetitive Reverse Voltage
RRM
1200
V
I
Average Forward Current
F(AV)
TC
30
=110°C
A
I
RMS Forward Current
F(RMS)
TC
42
=110°C
A
I
Non-Repetitive Surge Forward Current
FSM
TJ
300
=45°C, t=10ms, 50Hz, Sine
A
P
Power Dissipation
D
115
W
T
Junction Temperature
J
-40 to +150
°C
T
Storage Temperature Range
STG
-40 to +150
°C
Torque
Module-to-Sink
Recommended(M3)
1.1
N·m
R
Thermal Resistance
θJC
Junction-to-Case
1.1
°C /W
Weight
7.0
g
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
Reverse Leakage Current
RM
VR
--
=1200V
--
100
µA
VR=1200V, TJ
--
=125°C
--
1
mA
V
Forward Voltage
F
IF
--
=30A
2.15
2.5
V
IF=30A, TJ
--
=125°C
1.75
--
V
t
Reverse Recovery Time
rr
IF=1A, VR=30V, diF
--
/dt=-2
00A/μs
30
--
ns
t
Reverse Recovery Time
rr
VR=600V, IF=30A
diF/dt=-2
00A/μs, TJ
--
=25°C
160
--
ns
I
Max. Reverse Recovery Current
RRM
--
5
--
A
t
Reverse Recovery Time
rr
VR=600V, IF=30A
diF/dt=-2
00A/μs, TJ
--
=125°C
300
--
ns
I
Max. Reverse Recovery Current
RRM
--
11
--
A


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