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SS12T3 bảng dữ liệu(PDF) 1 Page - ON Semiconductor

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© Semiconductor Components Industries, LLC, 2013
June, 2013 − Rev. 2
1
Publication Order Number:
NSS12200W/D
NSS12200WT1G
12 V, 2 A, Low VCE(sat)
PNP Transistor
ON Semiconductor’s e2PowerEdge family of low VCE(sat)
transistors are miniature surface mount devices featuring ultra low
saturation voltage (VCE(sat)) and high current gain capability. These
are designed for use in low voltage, high speed switching applications
where affordable efficient energy control is important.
Typical application are DC−DC converters and power management
in portable and battery powered products such as cellular and cordless
phones, PDAs, computers, printers, digital cameras and MP3 players.
Other applications are low voltage motor controls in mass storage
products such as disc drives and tape drives. In the automotive
industry they can be used in air bag deployment and in the instrument
cluster. The high current gain allows e2PowerEdge devices to be
driven directly from PMU’s control outputs, and the Linear Gain
(Beta) makes them ideal components in analog amplifiers.
Features
High Current Capability (3 A)
High Power Handling (Up to 650 mW)
Low VCE(s) (170 mV Typical @ 1 A)
Small Size
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Benefits
High Specific Current and Power Capability Reduces Required PCB Area
Reduced Parasitic Losses Increases Battery Life
MAXIMUM RATINGS (TA = 25°C)
Rating
Symbol
Max
Unit
Collector-Emitter Voltage
VCEO
−12
Vdc
Collector-Base Voltage
VCBO
−12
Vdc
Emitter-Base Voltage
VEBO
−5.0
Vdc
Collector Current − Continuous
Collector Current − Peak
IC
ICM
−2.0
−3.0
Adc
Electrostatic Discharge
ESD
HBM Class 3
MM Class C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
http://onsemi.com
V2 = Specific Device Code
M = Date Code
G = Pb−Free Package
12 VOLTS
2.0 AMPS
PNP LOW VCE(sat) TRANSISTOR
EQUIVALENT RDS(on) 163 mW
COLLECTOR
1, 2, 5, 6
3
BASE
4
EMITTER
SC−88/SOT−363
CASE 419B
STYLE 20
V2 M
G
1
6
DEVICE MARKING
Device
Package
Shipping
ORDERING INFORMATION
NSS12200WT1G
SOT−363
(Pb−Free)
3000 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
1


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