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SS12T3 bảng dữ liệu(PDF) 1 Page - ON Semiconductor |
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SS12T3 bảng dữ liệu(HTML) 1 Page - ON Semiconductor |
1 / 5 page © Semiconductor Components Industries, LLC, 2013 June, 2013 − Rev. 2 1 Publication Order Number: NSS12200W/D NSS12200WT1G 12 V, 2 A, Low VCE(sat) PNP Transistor ON Semiconductor’s e2PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important. Typical application are DC−DC converters and power management in portable and battery powered products such as cellular and cordless phones, PDAs, computers, printers, digital cameras and MP3 players. Other applications are low voltage motor controls in mass storage products such as disc drives and tape drives. In the automotive industry they can be used in air bag deployment and in the instrument cluster. The high current gain allows e2PowerEdge devices to be driven directly from PMU’s control outputs, and the Linear Gain (Beta) makes them ideal components in analog amplifiers. Features • High Current Capability (3 A) • High Power Handling (Up to 650 mW) • Low VCE(s) (170 mV Typical @ 1 A) • Small Size • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Benefits • High Specific Current and Power Capability Reduces Required PCB Area • Reduced Parasitic Losses Increases Battery Life MAXIMUM RATINGS (TA = 25°C) Rating Symbol Max Unit Collector-Emitter Voltage VCEO −12 Vdc Collector-Base Voltage VCBO −12 Vdc Emitter-Base Voltage VEBO −5.0 Vdc Collector Current − Continuous Collector Current − Peak IC ICM −2.0 −3.0 Adc Electrostatic Discharge ESD HBM Class 3 MM Class C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. http://onsemi.com V2 = Specific Device Code M = Date Code G = Pb−Free Package 12 VOLTS 2.0 AMPS PNP LOW VCE(sat) TRANSISTOR EQUIVALENT RDS(on) 163 mW COLLECTOR 1, 2, 5, 6 3 BASE 4 EMITTER SC−88/SOT−363 CASE 419B STYLE 20 V2 M G 1 6 DEVICE MARKING Device Package Shipping† ORDERING INFORMATION NSS12200WT1G SOT−363 (Pb−Free) 3000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 1 |
Số phần tương tự - SS12T3 |
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Mô tả tương tự - SS12T3 |
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