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SS12T3 bảng dữ liệu(PDF) 2 Page - ON Semiconductor

tên linh kiện SS12T3
Giải thích chi tiết về linh kiện  PNP Transistor
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SS12T3 bảng dữ liệu(HTML) 2 Page - ON Semiconductor

  SS12T3 Datasheet HTML 1Page - ON Semiconductor SS12T3 Datasheet HTML 2Page - ON Semiconductor SS12T3 Datasheet HTML 3Page - ON Semiconductor SS12T3 Datasheet HTML 4Page - ON Semiconductor SS12T3 Datasheet HTML 5Page - ON Semiconductor  
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NSS12100UW3TCG
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2
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation, TA = 25°C
Derate above 25
°C
PD (Note 1)
740
6.0
mW
mW/
°C
Thermal Resistance, Junction−to−Ambient
RqJA (Note 1)
169
°C/W
Total Device Dissipation, TA = 25°C
Derate above 25
°C
PD (Note 2)
1.1
9.0
W
mW/
°C
Thermal Resistance, Junction−to−Ambient
RqJA (Note 2)
110
°C/W
Thermal Resistance, Junction−to−Lead 6
RqJL (Note 2)
33
°C/W
Junction and Storage Temperature Range
TJ, Tstg
−55 to +150
°C
1. FR− 4 @ 100 mm2, 1 oz copper traces.
2. FR− 4 @ 500 mm2, 1 oz copper traces.
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector − Emitter Breakdown Voltage, (IC = −10 mAdc, IB = 0)
V(BR)CEO
−12
Vdc
Collector − Base Breakdown Voltage, (IC = −0.1 mAdc, IE = 0)
V(BR)CBO
−12
Vdc
Emitter − Base Breakdown Voltage, (IE = −0.1 mAdc, IC = 0)
V(BR)EBO
−5.0
Vdc
Collector Cutoff Current, (VCB = −12 Vdc, IE = 0)
ICBO
−0.02
−0.1
mAdc
Emitter Cutoff Current, (VCES = −5.0 Vdc, IE = 0)
IEBO
−0.03
−0.1
mAdc
ON CHARACTERISTICS
DC Current Gain (Note 3)
(IC = −10 mA, VCE = −2.0 V)
(IC = −500 mA, VCE = −2.0 V)
(IC = −1.0 A, VCE = −2.0 V)
hFE
200
100
75
400
250
Collector − Emitter Saturation Voltage (Note 3)
(IC = −0.05 A, IB = −0.005 A) (Note 4)
(IC = −0.1 A, IB = −0.002 A)
(IC = −0.1 A, IB = −0.010 A)
(IC = −0.5 A, IB = −0.050 A)
(IC = −1.0 A, IB = −0.100 A)
VCE(sat)
−0.030
−0.080
−0.050
−0.200
−0.400
−0.040
−0.100
−0.060
−0.225
−0.440
V
Base − Emitter Saturation Voltage (Note 3)
(IC = −1.0 A, IB = −0.01 A)
VBE(sat)
−0.95
−1.15
V
Base − Emitter Turn−on Voltage (Note 3)
(IC = −2.0 A, VCE = −1.0 V)
VBE(on)
−1.05
−1.20
V
Input Capacitance (VEB = −0.5 V, f = 1.0 MHz)
Cibo
40
50
pF
Output Capacitance (VCB = −3.0 V, f = 1.0 MHz)
Cobo
15
20
pF
SWITCHING CHARACTERISTICS
Delay (VCC = −10 V, IC = 750 mA, IB1 = 15 mA)
td
20
ns
Rise (VCC = −10 V, IC = 750 mA, IB1 = 15 mA)
tr
90
ns
Storage (VCC = −10 V, IC = 750 mA, IB1 = 15 mA)
ts
140
ns
Fall (VCC = −10 V, IC = 750 mA, IB1 = 15 mA)
tf
100
ns
SMALL− SIGNAL CHARACTERISTICS
Current − Gain − Bandwidth Product, (IC = −100 mA, VCE = −5 Vdc, f = 100 MHz)
fT
200
MHz
Noise Figure, (IC = −0.2 mA, VCE = −5 Vdc, RS = 2 kW, f = 1 kHz, BW = 200Hz)
NF
5.0
dB
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulsed Condition: Pulse Width = 300
msec, Duty Cycle ≤ 2%.
4. Guaranteed by design but not tested.


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