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SS12T3 bảng dữ liệu(PDF) 2 Page - ON Semiconductor |
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2 / 5 page NSS12100UW3TCG http://onsemi.com 2 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation, TA = 25°C Derate above 25 °C PD (Note 1) 740 6.0 mW mW/ °C Thermal Resistance, Junction−to−Ambient RqJA (Note 1) 169 °C/W Total Device Dissipation, TA = 25°C Derate above 25 °C PD (Note 2) 1.1 9.0 W mW/ °C Thermal Resistance, Junction−to−Ambient RqJA (Note 2) 110 °C/W Thermal Resistance, Junction−to−Lead 6 RqJL (Note 2) 33 °C/W Junction and Storage Temperature Range TJ, Tstg −55 to +150 °C 1. FR− 4 @ 100 mm2, 1 oz copper traces. 2. FR− 4 @ 500 mm2, 1 oz copper traces. ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector − Emitter Breakdown Voltage, (IC = −10 mAdc, IB = 0) V(BR)CEO −12 − − Vdc Collector − Base Breakdown Voltage, (IC = −0.1 mAdc, IE = 0) V(BR)CBO −12 − − Vdc Emitter − Base Breakdown Voltage, (IE = −0.1 mAdc, IC = 0) V(BR)EBO −5.0 − − Vdc Collector Cutoff Current, (VCB = −12 Vdc, IE = 0) ICBO − −0.02 −0.1 mAdc Emitter Cutoff Current, (VCES = −5.0 Vdc, IE = 0) IEBO − −0.03 −0.1 mAdc ON CHARACTERISTICS DC Current Gain (Note 3) (IC = −10 mA, VCE = −2.0 V) (IC = −500 mA, VCE = −2.0 V) (IC = −1.0 A, VCE = −2.0 V) hFE 200 100 75 − − − 400 250 − Collector − Emitter Saturation Voltage (Note 3) (IC = −0.05 A, IB = −0.005 A) (Note 4) (IC = −0.1 A, IB = −0.002 A) (IC = −0.1 A, IB = −0.010 A) (IC = −0.5 A, IB = −0.050 A) (IC = −1.0 A, IB = −0.100 A) VCE(sat) − − − − − −0.030 −0.080 −0.050 −0.200 −0.400 −0.040 −0.100 −0.060 −0.225 −0.440 V Base − Emitter Saturation Voltage (Note 3) (IC = −1.0 A, IB = −0.01 A) VBE(sat) − −0.95 −1.15 V Base − Emitter Turn−on Voltage (Note 3) (IC = −2.0 A, VCE = −1.0 V) VBE(on) − −1.05 −1.20 V Input Capacitance (VEB = −0.5 V, f = 1.0 MHz) Cibo − 40 50 pF Output Capacitance (VCB = −3.0 V, f = 1.0 MHz) Cobo − 15 20 pF SWITCHING CHARACTERISTICS Delay (VCC = −10 V, IC = 750 mA, IB1 = 15 mA) td − − 20 ns Rise (VCC = −10 V, IC = 750 mA, IB1 = 15 mA) tr − − 90 ns Storage (VCC = −10 V, IC = 750 mA, IB1 = 15 mA) ts − − 140 ns Fall (VCC = −10 V, IC = 750 mA, IB1 = 15 mA) tf − − 100 ns SMALL− SIGNAL CHARACTERISTICS Current − Gain − Bandwidth Product, (IC = −100 mA, VCE = −5 Vdc, f = 100 MHz) fT 200 − − MHz Noise Figure, (IC = −0.2 mA, VCE = −5 Vdc, RS = 2 kW, f = 1 kHz, BW = 200Hz) NF − − 5.0 dB Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2%. 4. Guaranteed by design but not tested. |
Số phần tương tự - SS12T3 |
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Mô tả tương tự - SS12T3 |
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