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SS12T3 bảng dữ liệu(PDF) 1 Page - ON Semiconductor |
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1 / 5 page © Semiconductor Components Industries, LLC, 2014 September, 2014 − Rev. 1 1 Publication Order Number: NSS12100UW3/D NSS12100UW3TCG 12 V, 1 A, Low VCE(sat) PNP Transistor ON Semiconductor’s e2PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important. Typical application are DC−DC converters and power management in portable and battery powered products such as cellular and cordless phones, PDAs, computers, printers, digital cameras and MP3 players. Other applications are low voltage motor controls in mass storage products such as disc drives and tape drives. In the automotive industry they can be used in air bag deployment and in the instrument cluster. The high current gain allows e2PowerEdge devices to be driven directly from PMU’s control outputs, and the Linear Gain (Beta) makes them ideal components in analog amplifiers. Features • High Current Capability (1 A) • High Power Handling (Up to 740 mW) • Low VCE(s) (200 mV Typical @ 500 mA) • Small Size • Low Noise • NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Benefits • High Specific Current and Power Capability Reduces Required PCB Area • Reduced Parasitic Losses Increases Battery Life MAXIMUM RATINGS (TA = 25°C) Rating Symbol Max Unit Collector-Emitter Voltage VCEO −12 Vdc Collector-Base Voltage VCBO −12 Vdc Emitter-Base Voltage VEBO −5.0 Vdc Collector Current − Continuous Collector Current − Peak IC ICM −1.0 −2.0 Adc Electrostatic Discharge ESD HBM Class 3B MM Class C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. http://onsemi.com 12 VOLTS, 1.0 AMPS PNP LOW VCE(sat) TRANSISTOR EQUIVALENT RDS(on) 400 mW Device Package Shipping† ORDERING INFORMATION †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. WDFN3 CASE 506AU NSS12100UW3TCG WDFN3 (Pb−Free) 3000/ Tape & Reel 1 VG = Specific Device Code M = Date Code G = Pb−Free Package VG M G 1 MARKING DIAGRAM 2 3 COLLECTOR 3 1 BASE 2 EMITTER NSV12100UW3TCG WDFN3 (Pb−Free) 3000/ Tape & Reel |
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