Features

n

RoHScompliant*

n

Lowpowerlossandhighefficiency

n

Highcurrentcapability

n

Lowprofilepackage

Applications

n

ACoperatedproducts

n

Computermonitors

n

Set-topboxes

n

Cablemodems

*RoHSDirective2002/95/ECJan.27,2003includingannexandRoHSRecast2011/65/EUJune8,2011.

Specificationsaresubjecttochangewithoutnotice.

Thedevicecharacteristicsandparametersinthisdatasheetcananddovaryindifferentapplicationsandactualdeviceperformancemayvaryovertime.

Usersshouldverifyactualdeviceperformanceintheirspecificapplications.

Parameter

Symbol

CD-

Unit

MBL102S

MBL104S

MBL106S

MBL108S

MBL110S

Maximum Repetitive

Peak Reverse Voltage

VRRM

200

400

600

800

1000

V

Maximum RMS Voltage

VRMS

140

280

420

560

700

V

Maximum Average Forward Rectified

IF(AV)

1

A

Peak Forward Surge Current 8.3 ms

Single Half Sine-Wave Superimposed

on Rated Load (JEDEC Method)

IFSM

30

A

Operating Temperature Range

TJ

-55 to +175

°C

Storage Temperature Range

TSTG

-55 to +175

°C

General Information

The markets of portable communications, computing and video equipment are

challenging the semiconductor industry to develop increasingly smaller electronic

components.

Bourns offers Bridge Rectifier Diodes for rectification applications in compact chip package

0.23 ˝ x 0.20 ˝ size format, which offers PCB real estate savings and are considerably smaller

than standard parts. The Bridge Rectifier Diodes offer a forward current of 1 A with a choice

of repetitive peak reverse voltages between 200 V and 1000 V.

Parameter

Symbol

CD-MBL1xxS

Unit

Test Conditions

Min.

Typ.

Max.

Instantaneous Forward Voltage

VF

IF = 1 A

0.95

1.0

V

Repetitive Peak Reverse Current

IRRM

VR = VRRM

TA = +25 °C

5.0

µA

TA = +150 °C

200

µA

Junction Capacitance

CJ

VR = 4 V, f = 1.0 MHz

25

pF

RΘJA

95

°C / W

RΘJL

20

°C / W

NOTE 1: Measured when mounted on PCB with 5.0 mm x 5.0 mm (0.2 “ x 0.2 “) copper pad areas.

4

–

1

+

3

~

2

~