BCW70LT1G datasheet(5/6 Pages) ONSEMI

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BCW70LT1G

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5

TYPICAL DYNAMIC CHARACTERISTICS

Figure 12. Current−Gain — Bandwidth Product

IC, COLLECTOR CURRENT (mA)

Figure 13. Capacitance

VR, REVERSE VOLTAGE (VOLTS)

500

0.5

10

50

70

100

200

300

0.7 1.0

2.0

3.0

5.0 7.0

10

20

30

50

TJ = 25°C

VCE = 20 V

5.0 V

1.0

2.0

3.0

5.0

7.0

0.1

0.2

0.5

1.0

2.0

5.0

10

20

50

0.05

Cib

Cob

TJ = 25°C

Figure 14. Thermal Response

t, TIME (ms)

1.0

0.01

0.02

0.03

0.05

0.07

0.1

0.2

0.3

0.5

0.7

0.02

0.05

0.1

0.2

0.5

1.0

2.0

5.0

10

20

50

100

200

500

1.0k 2.0k

5.0k 10k

20k

50k 100

D = 0.5

0.2

0.1

0.05

0.02

0.01

SINGLE PULSE

DUTY CYCLE, D = t1/t2

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

READ TIME AT t1 (SEE AN-569)

ZqJA(t) = r(t) w RqJA

TJ(pk) - TA = P(pk) ZqJA(t)

t1

t2

P(pk)

FIGURE 16

TJ, JUNCTION TEMPERATURE (°C)

104

-4

0

Figure 15. Typical Collector Leakage Current

DESIGN NOTE: USE OF THERMAL RESPONSE DATA

A train of periodical power pulses can be represented by the model

as shown in Figure 16. Using the model and the device thermal

response the normalized effective transient thermal resistance of

Figure 14 was calculated for various duty cycles.

To find ZqJA(t), multiply the value obtained from Figure 14 by the

steady state value RqJA.

Example:

Dissipating 2.0 watts peak under the following conditions:

t1 = 1.0 ms, t2 = 5.0 ms (D = 0.2)

Using Figure 14 at a pulse width of 1.0 ms and D = 0.2, the reading

of r(t) is 0.22.

The peak rise in junction temperature is therefore

DT = r(t) x P(pk) x RqJA = 0.22 x 2.0 x 200 = 88°C.

For more information, see AN−569.

10-2

10-1

100

101

102

103

-2

0

+ 20

+ 40

+ 60

+ 80 + 100 + 120 + 140 + 160

VCC = 30 V

ICEO

ICBO

AND

ICEX @ VBE(off) = 3.0 V

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ON Semiconductor	BCW70LT1G	271Kb / 6P	General Purpose Transistor August, 2009 ??Rev. 3

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