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SS12T3 bảng dữ liệu(PDF) 2 Page - ON Semiconductor |
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2 / 5 page NSS12201LT1G www.onsemi.com 2 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector−Emitter Breakdown Voltage (IC = 10 mAdc, IB = 0) V(BR)CEO 12 − − Vdc Collector−Base Breakdown Voltage (IC = 0.1 mAdc, IE = 0) V(BR)CBO 12 − − Vdc Emitter−Base Breakdown Voltage (IE = 0.1 mAdc, IC = 0) V(BR)EBO 6.0 − − Vdc Collector Cutoff Current (VCB = 12 Vdc, IE = 0) ICBO − − 0.1 mAdc Emitter Cutoff Current (VEB = 6.0 Vdc) IEBO − − 0.1 mAdc ON CHARACTERISTICS DC Current Gain (Note 3) (IC = 10 mA, VCE = 2.0 V) (IC = 500 mA, VCE = 2.0 V) (IC = 1.0 A, VCE = 2.0 V) (IC = 2.0 A, VCE = 2.0 V) hFE 200 200 200 200 − 330 − − − − − − Collector−Emitter Saturation Voltage (Note 3) (IC = 0.1 A, IB = 0.01 A) (IC = 1.0 A, IB = 0.100 A) (IC = 1.0 A, IB = 0.010 A) (IC = 2.0 A, IB = 0.2 A) VCE(sat) − − − − 0.003 0.035 0.053 0.068 0.008 0.050 0.080 0.090 V Base −Emitter Saturation Voltage (Note 3) (IC = 1.0 A, IB = 10 mA) VBE(sat) − 0.760 0.900 V Base −Emitter Turn−on Voltage (Note 3) (IC = 1.0 A, VCE = 2.0 V) VBE(on) − 0.750 0.900 V Cutoff Frequency (IC = 100 mA, VCE = 5.0 V, f = 100 MHz) fT 150 − − MHz Input Capacitance (VEB = 0.5 V, f = 1.0 MHz) Cibo − − 450 pF Output Capacitance (VCB = 3.0 V, f = 1.0 MHz) Cobo − − 75 pF SWITCHING CHARACTERISTICS Delay (VCC = 10 V, IC = 750 mA, IB1 = 15 mA) td − − 100 ns Rise (VCC = 10 V, IC = 750 mA, IB1 = 15 mA) tr − − 100 ns Storage (VCC = 10 V, IC = 750 mA, IB1 = 15 mA) ts − − 350 ns Fall (VCC = 10 V, IC = 750 mA, IB1 = 15 mA) tf − − 110 ns Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2%. |
Số phần tương tự - SS12T3 |
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Mô tả tương tự - SS12T3 |
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