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SS12T3 bảng dữ liệu(PDF) 1 Page - ON Semiconductor

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© Semiconductor Components Industries, LLC, 2005
October, 2016 − Rev. 6
1
Publication Order Number:
NSS12201L/D
NSS12201LT1G
12 V, 4.0 A, Low VCE(sat)
NPN Transistor
ON Semiconductor’s e2PowerEdge family of low VCE(sat)
transistors are miniature surface mount devices featuring ultra low
saturation voltage (VCE(sat)) and high current gain capability. These
are designed for use in low voltage, high speed switching applications
where affordable efficient energy control is important.
Typical applications are DC−DC converters and power management
in portable and battery powered products such as cellular and cordless
phones, PDAs, computers, printers, digital cameras and MP3 players.
Other applications are low voltage motor controls in mass storage
products such as disc drives and tape drives. In the automotive
industry they can be used in air bag deployment and in the instrument
cluster. The high current gain allows e2PowerEdge devices to be
driven directly from PMU’s control outputs, and the Linear Gain
(Beta) makes them ideal components in analog amplifiers.
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (TA = 25°C)
Rating
Symbol
Max
Unit
Collector-Emitter Voltage
VCEO
12
Vdc
Collector-Base Voltage
VCBO
12
Vdc
Emitter-Base Voltage
VEBO
6.0
Vdc
Collector Current − Continuous
IC
2.0
A
Collector Current − Peak
ICM
4.0
A
Electrostatic Discharge
ESD
HBM Class 3B
MM Class C
MAXIMUM RATINGS (TA = 25°C)
Rating
Symbol
Max
Unit
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation
TA = 25°C
Derate above 25°C
PD (Note 1)
460
3.7
mW
mW/°C
Thermal Resistance,
Junction−to−Ambient
RqJA (Note 1)
270
°C/W
Total Device Dissipation
TA = 25°C
Derate above 25°C
PD (Note 2)
540
4.3
mW
mW/°C
Thermal Resistance,
Junction−to−Ambient
RqJA (Note 2)
230
°C/W
Junction and Storage
Temperature Range
TJ, Tstg
−55 to
+150
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR−4 @ 100 mm2, 1 oz. copper traces.
2. FR−4 @ 500 mm2, 1 oz. copper traces.
Device
Package
Shipping
ORDERING INFORMATION
NSS12201LT1G
SOT−23
(Pb−Free)
3000/Tape & Reel
MARKING DIAGRAM
SOT−23 (TO−236)
CASE 318
STYLE 6
3
2
1
www.onsemi.com
12 VOLTS, 4.0 AMPS
NPN LOW VCE(sat) TRANSISTOR
EQUIVALENT RDS(on) 35 mW
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
1
VF M G
G
VF = Specific Device Code
M
= Date Code*
G
= Pb−Free Package
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
COLLECTOR
3
1
BASE
2
EMITTER
(Note: Microdot may be in either location)


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