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2N2221A bảng dữ liệu(PDF) 2 Page - M/A-COM Technology Solutions, Inc.

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Giải thích chi tiết về linh kiện  Radiation Hardened NPN Silicon Switching Transistors
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nhà sản xuất  MA-COM [M/A-COM Technology Solutions, Inc.]
Trang chủ  http://www.macomtech.com
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Radiation Hardened NPN Silicon Switching Transistors
Rev. V1
2N2221A, L, UA, UB &
2N2222A, L, UA, UB
2
2
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
2
Electrical Specifications @ TA = 25°C
Parameter
Test Conditions
Symbol Units Minimum Maximum
Dynamic Characteristics:
Small-Signal Short-Circuit
Forward Current Transfer Ratio
IC = 1 mAdc, VCE = 10 Vdc, f = 1 kHz
2N2221A, L, UA, UB
2N2222A, L, UA, UB
hfe
30
50
Magnitude of Small-Signal Short-Circuit,
Forward Current Transfer Ratio
IC = 20 mAdc, VCE = 20 Vdc, f = 100 MHz
| hfe |
2.5
Output Capacitance
VCB = 10 Vdc, IE = 0, 100 kHz ≤ f ≤ 1 MHz
VCB = 0.5 Vdc, IE = 0, 100 kHz ≤ f ≤ 1 MHz
COBO
C1BO
pF
8
25
Switching Characteristics:
Turn-On Time
(See figure 17 of MIL-PRF-19500/255)
TON
ns
35
Turn-Off Time
(See Figure 18 of MIL-PRF-19500/255)
TOFF
ns
300
Absolute Maximum Ratings @ TC = 25°C
Parameter
Absolute Maximum
Collector - Emitter Voltage (VCEO)
50 Vdc
Collector - Base Voltage (VCBO)
75 Vdc
Emitter - Base Voltage (VEBO)
6.0 Vdc
Collector Current (IC)
800 mAdc
Total Power Dissipation (PT) TA = +25ºC
0.5 W
Thermal Resistance (RΘJC) Junction to Ambient
325 ºC/W
Operating Temperature
-65°C to +200°C
Storage Temperature
-65°C to +200°C


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