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MJE5742G bảng dữ liệu(PDF) 2 Page - ON Semiconductor

tên linh kiện MJE5742G
Giải thích chi tiết về linh kiện  NPN Silicon Power Darlington Transistors
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nhà sản xuất  ONSEMI [ON Semiconductor]
Trang chủ  http://www.onsemi.com
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MJE5742G bảng dữ liệu(HTML) 2 Page - ON Semiconductor

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MJE5740, MJE5742
www.onsemi.com
2
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS (Note 2)
Collector−Emitter Sustaining Voltage
MJE5740
(IC = 50 mA, IB = 0)
MJE5742
VCEO(sus)
300
400
Vdc
Collector Cutoff Current (VCEV = Rated Value, VBE(off) = 1.5 Vdc)
(VCEV = Rated Value, VBE(off) = 1.5 Vdc, TC = 100_C)
ICEV
1
5
mAdc
Emitter Cutoff Current (VEB = 8 Vdc, IC = 0)
IEBO
75
mAdc
SECOND BREAKDOWN
Second Breakdown Collector Current with Base Forward Biased
IS/b
See Figure 6
Clamped Inductive SOA with Base Reverse Biased
RBSOA
See Figure 7
ON CHARACTERISTICS (Note 2)
DC Current Gain (IC = 0.5 Adc, VCE = 5 Vdc)
(IC = 4 Adc, VCE = 5 Vdc)
hFE
50
200
100
400
Collector−Emitter Saturation Voltage (IC = 4 Adc, IB = 0.2 Adc)
Collector−Emitter Saturation Voltage (IC = 8 Adc, IB = 0.4 Adc)
Collector−Emitter Saturation Voltage (IC = 4 Adc, IB = 0.2 Adc, TC = 100_C)
VCE(sat)
2
3
2.2
Vdc
Base−Emitter Saturation Voltage (IC = 4 Adc, IB = 0.2 Adc)
Base−Emitter Saturation Voltage (IC = 8 Adc, IB = 0.4 Adc)
Base−Emitter Saturation Voltage (IC = 4 Adc, IB = 0.2 Adc, TC = 100_C)
VBE(sat)
2.5
3.5
2.4
Vdc
Diode Forward Voltage (Note 3) (IF = 5 Adc)
Vf
2.5
Vdc
SWITCHING CHARACTERISTICS
Typical Resistive Load (Table 1)
Delay Time
(VCC = 250 Vdc, IC(pk) = 6 A
IB1 = IB2 = 0.25 A, tp = 25 ms,
Duty Cycle
v 1%)
td
0.04
ms
Rise Time
tr
0.5
ms
Storage Time
ts
8
ms
Fall Time
tf
2
ms
Inductive Load, Clamped (Table 1)
Voltage Storage Time
(IC(pk) = 6 A, VCE(pk) = 250 Vdc
IB1 = 0.06 A, VBE(off) = 5 Vdc)
tsv
4
ms
Crossover Time
tc
2
ms
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Pulse Test: Pulse Width 300
ms, Duty Cycle = 2%.
3. The internal Collector−to−Emitter diode can eliminate the need for an external diode to clamp inductive loads. Tests have shown that the
Forward Recovery Voltage (Vf) of this diode is comparable to that of typical fast recovery rectifiers.
ORDERING INFORMATION
Device
Package
Shipping
MJE5740G
TO−220
(Pb−Free)
50 Units / Rail
MJE5742G
TO−220
(Pb−Free)


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