2SC2412KS datasheet(1/4 Pages) YEASHIN

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DATA SHEET

SEMICONDUCTOR

http://www.yeashin.com

1

REV.02 20120703

2SC2412KQ/R/S

General Purpose Transistors

NPN Silicon

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector–Emitter Voltage

V CEO

50

V

Collector–Base Voltage

V CBO

60

V

Emitter–Base Voltage

V EBO

7.0

V

Collector Current — Continuous

I C

150

mAdc

Collector power dissipation

P C

0.2

W

Junction temperature

T j

150

°C

Storage temperature

T stg

-55 ~+150

°C

DEVICE MARKING

2SC2412KQ =BQ 2SC2412KR =BR 2SC2412KS =G1F

ELECTRICAL CHARACTERISTICS (T

A = 25°C unless otherwise noted.)

Characteristic

Symbol

Min

Typ

Max

Unit

Collector–Emitter Breakdown Voltage

V (BR)CEO

50

—

V

(IC = 1 mA)

Emitter–Base Breakdown Voltage

V (BR)EBO

7—

—

V

(IE = 50

µA)

Collector–Base Breakdown Voltage

V (BR)CBO

60

—

V

(IC = 50

µA)

Collector Cutoff Current

I CBO

—

0.1

µA

(VCB = 60 V)

Emitter cutoff current

I EBO

—

0.1

µA

(VEB = 7 V)

Collector-emitter saturation voltage

V CE(sat)

—

0.4

V

(IC/ IB = 50 mA / 5m A)

DC current transfer ratio

h FE

120

––

560

––

(V CE = 6 V, I C= 1mA)

Transition frequency

f T

—

180

––

MHz

(V CE = 12 V, I E= – 2mA, f =30MHz )

Output capacitance

C ob

—

2.0

3.5

pF

(V CB = 12 V, I E= 0A, f =1MHz )

h FE values are classified as follows:

QR

S

hFE

120~270

180~390

270~560

2

EMITTER

3

COLLECTOR

1

BASE

*

• Pb−Free Package is Available.

Device

Marking

Shipping

2SC2412KQ

BR

G1F

3000 Tape & Reel

ORDERING INFORMATION

2SC2412KR

2SC2412KS

BQ

SOT–23 (TO–236AB)

1

2

3

H

Số phần tương tự - 2SC2412KS

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
AiT Semiconductor Inc.	2SC2412KS	600Kb / 7P	GENERAL PURPOSE TRANSISTORS PNP SILICON

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