công cụ tìm kiếm bảng dữ liệu linh kiện điện tử |
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LM2633 bảng dữ liệu(PDF) 9 Page - National Semiconductor (TI) |
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LM2633 bảng dữ liệu(HTML) 9 Page - National Semiconductor (TI) |
9 / 40 page Electrical Characteristics (Continued) V CC = +15V unless otherwise indicated under the Conditions column. Typicals and limits appearing in plain type apply for TA =T J = +25˚C. Limits appearing in boldface type apply over 0˚C to +125˚C. Symbol Parameter Conditions Min Typ Max Units SYSTEM V uvlo_thr VIN Under-voltage Lockout (UVLO) Threshold Rising Edge 4.2 4.5 V V uvlo_hys VIN UVLO Hysteresis 300 mV V uvp1 Channel 1 V OUT Under-voltage Shutdown Latch Threshold (Measured at the FB1) VID4:0 = 01100 73 80 83 %V OUT V uvp2, 3 Channels 2 and 3 V OUT Undervoltage Shutdown Latch Threshold (Measured at the FB2 and FB3) VID4:0 = 01100 76 80 86 %V OUT V ovp1 V OUT Overvoltage Shutdown Latch Threshold for Channel 1 (Measured at the FB1) 110 114 119 %V OUT V ovp2 V OUT Overvoltage Shutdown Latch Threshold for Channel 2 (Measured at the FB2) 109 112 115 %V OUT V lreg_thr V OUT Low Regulation Comparator Enable Threshold for Channels 1 and 2 91.5 %V OUT V lreg_hys Hysteresis of Low Regulation Comparator 7%V OUT V pwrbad Regulator Window Detector Thresholds (PGOOD from High to Low) 85 88 %V OUT (Note 22) 110 112 119 V pwrgd Regulator Window Detector Thresholds (PGOOD from Low to High) 90 93 97 %V OUT Gate Drive (For Channel 1 Switching Regulator Controller) I boot1 CBOOT Leakage Current V CBOOT1 =7V 100 nA HDRV1 Source Current V HDRV1 =VSW1 =0V, VCBOOT1 = 5V 1.2 A HDRV1 Sink Current V HDRV1 = 5V 1.0 A LDRV1 Source Current V LDRV1 = 0V 1.2 A LDRV1 Sink Current V LDRV1 = 5V 2.0 A HDRV1 High-Side FET On-Resistance 1.84 Ω LDRV1 High-Side FET On-Resistance tbd Ω LDRV1 Low-Side FET On-Resistance 0.5 Ω www.national.com 9 |
Số phần tương tự - LM2633 |
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Mô tả tương tự - LM2633 |
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